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<journal-id journal-id-type="publisher">global-journal-of-research-in-engineering-f-electrical-electronic</journal-id>
<journal-title-group>
<journal-title>Global Journal of Research in Engineering - F: Electrical &amp; Electronic</journal-title>
</journal-title-group>
<issn publication-format="print">0975-5861</issn>
<issn publication-format="electronic">2249-4596</issn>
<publisher><publisher-name>Global Journals Publishing Group Incorporated</publisher-name></publisher>
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<article-id pub-id-type="publisher-id">56091</article-id>
<title-group>
<article-title>A Pseudo-PMOS Logic for Realizing Wide Fan-In NAND Gates</article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author"><name><surname>Sharroush</surname><given-names>Sherif M.</given-names></name><xref ref-type="aff" rid="aff1" />
</contrib>
</contrib-group>
<aff id="aff1">EGYPT, Port Said University.</aff>
<pub-date publication-format="electronic" date-type="pub" iso-8601-date="2017-01-15">
<day>15</day>
<month>01</month>
<year>2017</year>
</pub-date>
<volume>17</volume>
<issue>F7</issue>
<fpage>1</fpage>
<lpage>14</lpage>
<abstract><p>Wide fan-in logic gates when implemented in static complementary CMOS logic consume a significant area overhead, consume a large power consumption, and have a large propagation delay. In this paper, a pseudo-PMOS logic is presented for the realization of wide fan-in NAND gates in a manner similar to the realization of wide fan-in NOR gates using the pseudo-NMOS logic. The circuit design issues of this family are discussed. Also, it is compared with the conventional CMOS logic from the points of view of the area, the average propagation delay, the average power consumption, and the logic swing using a proper figure of merit. The effects of technology scaling and process variations on this family are investigated. Simulation results verify the enhancement in performance in which the 45 nm CMOS technology is adopted.</p></abstract>
<kwd-group kwd-group-type="author-generated">
<kwd>area</kwd>
<kwd>energy-delay product</kwd>
<kwd>power consumption</kwd>
<kwd>power-delay product</kwd>
<kwd>propagation delay</kwd>
<kwd>pseudo-PMOS logic</kwd>
<kwd>wide fan-in.</kwd>
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<self-uri content-type="pdf" xlink:href="https://globaljournals.org/GJRE_Volume17/1-A-Pseudo-PMOS-Logic.pdf" />
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<title>Full Text</title>
<p>Wide fan-in logic gates when implemented in static complementary CMOS logic consume a significant area overhead, consume a large power consumption, and have a large propagation delay. In this paper, a pseudo-PMOS logic is presented for the realization of wide fan-in NAND gates in a manner similar to the realization of wide fan-in NOR gates using the pseudo-NMOS logic. The circuit design issues of this family are discussed. Also, it is compared with the conventional CMOS logic from the points of view of the area, the average propagation delay, the average power consumption, and the logic swing using a proper figure of merit. The effects of technology scaling and process variations on this family are investigated. Simulation results verify the enhancement in performance in which the 45 nm CMOS technology is adopted.</p>
</sec>
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