global-journal-of-science-frontier-research-a-physics-space-science Global Journal of Science Frontier Research - A: Physics & Space Science 0975-5896 2249-4626 Global Journals Publishing Group Incorporated 58293 Test and Research of Silicon Materials in Integrated device Engineering Silicon Single Crystal Growth and Chip Fabrication YangChuan-Zheng CHINA, Shanghai University 11 07 2023 23 A4 59 87

It is of great practical significance to test and analyze the quality of silicon materials used in integrated devices and their changes in planar thermal process. This paper summarizes the international test, analysis and research results. The contents include polycrystal preparation, single crystal growth and its crystal defects, wafer cutting, grinding and polishing, wafer tracking observation and analysis in plane thermal process, generation control and elimination of induced dislocations, etc.

 polycrystalline and monocrystal silicon crystal defects induced slip dislocations. Full Text

It is of great practical significance to test and analyze the quality of silicon materials used in integrated devices and their changes in planar thermal process. This paper summarizes the international test, analysis and research results. The contents include polycrystal preparation, single crystal growth and its crystal defects, wafer cutting, grinding and polishing, wafer tracking observation and analysis in plane thermal process, generation control and elimination of induced dislocations, etc.