global-journal-of-science-frontier-research-b-chemistry Global Journal of Science Frontier Research - B: Chemistry 0975-5896 2249-4626 Global Journals Publishing Group Incorporated 59010 Stresses Relaxation Mechanism in the Si-SiO2 System and its Influence on the Interface Properties KropmanDaniel SeemanViktor MedvidsArtur ESTONIA, Tallinn University 10 03 2017 17 B1 1 5

The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depended on the oxidation condition: temperature, cooling rate, oxide thickness. In the Si-SiO 2 -Si 3 N 4 system the stresses relaxation by the strain occur due to the opposite sign of the thermal expansion coefficient of Si-SiO 2 and Si 3 N 4 on Si. Laser irradiation allows to modify the system stresses.

 Si-SiO2 interface stress relaxation EPR SEM. Full Text

The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depended on the oxidation condition: temperature, cooling rate, oxide thickness. In the Si-SiO2-Si3N4 system the stresses relaxation by the strain occur due to the opposite sign of the thermal expansion coefficient of Si-SiO2 and Si3N4 on Si. Laser irradiation allows to modify the system stresses.