global-journal-of-research-in-engineering-f-electrical-electronic Global Journal of Research in Engineering - F: Electrical & Electronic 0975-5861 2249-4596 Global Journals Publishing Group Incorporated 64529 Base Doping Profile Investigation into Transient Base Charge Modeling of IGBT DasAvijit IslamMd Nazmul BANGLADESH, Bangladesh University of Engineering & Technology 15 03 2015 15 F9 1 6

The study of doping concentration in the carrier storage region of IGBT is considered desirable in many power converter applications. This Letter presents base doping profile estimation through investigation into transient base charge modeling of Non-punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic profile has been used for base carrier concentration which consequently leads to an analytical model for transient base charge decay of IGBT. The proposed model shows better consistency compared to the previously used linear model in all doping profiles. Finally, the implications of doping dependence on the base charge decay are explained, including implementation of doping profile estimation technique.

 base doping profile transient base charge parabolic approximation effective base width ambipolar diffusion length. Full Text

The study of doping concentration in the carrier storage region of IGBT is considered desirable in many power converter applications. This Letter presents base doping profile estimation through investigation into transient base charge modeling of Non-punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic profile has been used for base carrier concentration which consequently leads to an analytical model for transient base charge decay of IGBT. The proposed model shows better consistency compared to the previously used linear model in all doping profiles. Finally, the implications of doping dependence on the base charge decay are explained, including implementation of doping profile estimation technique.