AC Characteristics of a Dual Gate Large Area Graphene MOSFET

§ Khulna University of Engineering & Technology

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AC Characteristics of a Dual Gate Large Area Graphene MOSFET

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Abstract

This paper presents a detailed study of RF characteristics together with the high frequency performance of dual gate large area graphene MOSFET. A quasi analytical modeling approach is presented here. To know the RF characteristics of a graphene MOSFET, the transconductance is simulated using small signal equivalent model. Finally the intrinsic top and back gate gain of graphene MOSFET are also shown which are very important figure of merit for RF applications.

References

10 Cites in Article
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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Md. Tawabur Rahman, Ashish Kumar Roy, sarkershamimbd. 2014. "AC Characteristics of a Dual Gate Large Area Graphene MOSFET". Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 14 (GJRE Volume 14 Issue F4).

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Keywords
Classification
GJRE-F Classification FOR Code: 290903
Version of record

v1.2

Issue date
June 29, 2014

Language
English
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AC Characteristics of a Dual Gate Large Area Graphene MOSFET

Md. Rahman
Md. Rahman Khulna University of Engineering & Technology
Ashish Roy
Ashish Roy