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This paper presents a detailed study of RF characteristics together with the high frequency performance of dual gate large area graphene MOSFET. A quasi analytical modeling approach is presented here. To know the RF characteristics of a graphene MOSFET, the transconductance is simulated using small signal equivalent model. Finally the intrinsic top and back gate gain of graphene MOSFET are also shown which are very important figure of merit for RF applications.
Md. Tawabur Rahman, Ashish Kumar Roy, sarkershamimbd. 2014. "AC Characteristics of a Dual Gate Large Area Graphene MOSFET". Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 14 (GJRE Volume 14 Issue F4).
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
v1.2
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Total Score: 104
Country: Bangladesh
Subject: Global Journal of Research in Engineering
Authors: Md. Tawabur Rahman, Ashish Kumar Roy, Md. Shamim Sarker, Md. Tajul Islam (PhD/Dr. count: 0)
View Count (all-time): 325
Total Views (Real + Logic): 1021
Total Downloads (simulated): 81
Publish Date: 2014 01, Wed
Monthly Totals (Real + Logic):
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