Effect of Band Gap Difference and Doping Concentration on the Performance of an InxGa1-xN Based Multi Quantum Well Solar Cell

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Effect of Band Gap Difference and Doping Concentration on the Performance of an InxGa1-xN Based Multi Quantum Well Solar Cell

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Abstract

Increasing the efficiency of solar cell is the prime concern in the field of photovoltaic technology as solar cell has become the promising source of renewable energy in recent years. This paper presents InxGa1-xN based multi quantum well solar cell for higher efficiency. In this paper the performance of the solar cell i.e., open circuit voltage, short circuit current and efficiency are justified with the variation of band gap difference and donor and acceptor doping concentration. The maximum efficiency is found when the baseline cell is designed at 1.424eV and the maximum efficiency is 30.17% and 31.94% for a band gap difference of 0.3eV and donor doping concentration of 5*1018 cm-3 respectively.

References

6 Cites in Article
  1. R Dahal,J Li,K Aryal,J Lin,H Jiang (2010). InGaN/GaN multiple quantum well concentrator solar cells.
  2. O; Jani,C Honsberg,Ali Asghar,D Nicol (2005). Characterization and analysis of InGaN photovoltaic devices.
  3. P Fu,G Lin,C Ho (2012). Efficiency enhancement of InGaN multi-quantum-well solar cells via light-harvesting SiO 2 nano-honeycombs.
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  5. T Shubina,S Ivanov,V Jmerik,D Solnyshkov,V Vekshin,P Kop’ev,A Vasson,J Leymarie,A Kavokin,H Amano,K Shimono,A Kasic,B Monemar (2004). Erratum: Mie Resonances, Infrared Emission, and the Band Gap of InN [Phys. Rev. Lett.<b>92</b>, 117407 (2004)].
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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Md. Nasmus Sakib Khan Shabbir, Nezam Uddin, atiqulislam.atiq, 0703043. 2014. "Effect of Band Gap Difference and Doping Concentration on the Performance of an InxGa1-xN Based Multi Quantum Well Solar Cell". Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 14 (GJRE Volume 14 Issue F4).

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Keywords
Classification
GJRE-F Classification FOR Code: 090605
Version of record

v1.2

Issue date
June 29, 2014

Language
English
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Effect of Band Gap Difference and Doping Concentration on the Performance of an InxGa1-xN Based Multi Quantum Well Solar Cell

Md. Shabbir
Md. Shabbir Bangladesh University of Business & Technology (BUBT)
Nezam Uddin
Nezam Uddin