Equivalent Circuit-level Characterization of 1.55 m InGaN Laser

§ Khulna University of Engineering & Technology (KUET)

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Equivalent Circuit-level Characterization of 1.55 m InGaN Laser

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Abstract

In GaN is one of the most promising group III-V nitride materials recently focused for semiconductor based device fabrication. The advent of long haul optical communication system requires sophisticated and reliable lasing device. InGaN based lasers composited to have 0.8 eV bandgap energy produce coherent light of 1.55 Ξm. In this paper, the output characteristics of a heterostructured laser with InGaN as active layer is presented systematically. The circuit-level laser modeling is developed by solving the respective rate equations. This includes the conversion of the complete laser system into its equivalent electrical circuits. Thereafter, simulation was carried out using PSPICE to evaluate the electrical quantities e.g. output power, I-V characteristics, slope efficiency and transient response.

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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Md. Jahirul Islam. 2017. "Equivalent Circuit-level Characterization of 1.55 m InGaN Laser". Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 17 (GJRE Volume 17 Issue F4).

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Keywords
Classification
GJRE-F Classification FOR Code: 090699
Version of record

v1.2

Issue date
September 11, 2017

Language
English
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Equivalent Circuit-level Characterization of 1.55 m InGaN Laser

Md. Islam
Md. Islam Khulna University of Engineering & Technology (KUET)