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In GaN is one of the most promising group III-V nitride materials recently focused for semiconductor based device fabrication. The advent of long haul optical communication system requires sophisticated and reliable lasing device. InGaN based lasers composited to have 0.8 eV bandgap energy produce coherent light of 1.55 Ξm. In this paper, the output characteristics of a heterostructured laser with InGaN as active layer is presented systematically. The circuit-level laser modeling is developed by solving the respective rate equations. This includes the conversion of the complete laser system into its equivalent electrical circuits. Thereafter, simulation was carried out using PSPICE to evaluate the electrical quantities e.g. output power, I-V characteristics, slope efficiency and transient response.
Md. Jahirul Islam. 2017. "Equivalent Circuit-level Characterization of 1.55 m InGaN Laser". Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 17 (GJRE Volume 17 Issue F4).
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
v1.2
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Total Score: 102
Country: Bangladesh
Subject: Global Journal of Research in Engineering
Authors: Md. Jahirul Islam, Md. Rafiqul Islam (PhD/Dr. count: 0)
View Count (all-time): 379
Total Views (Real + Logic): 1112
Total Downloads (simulated): 82
Publish Date: 2017 01, Sun
Monthly Totals (Real + Logic):
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