Abstract
Measured resistivities of produced silicide showed their good conductive properties. The calculation of technological route for obtaining thin silicide contacts (
Measured resistivities of produced silicide showed their good conductive properties. The calculation of technological route for obtaining thin silicide contacts (<100A0) in multilayer metallization of Si substrate was carried out, and the optimal technological regimes for obtaining Pd, Pt and Ni silicide in single-layer metallization of Si substrate were determined.
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E.A. Kerimov. 2026. “. Global Journal of Research in Engineering – G: Industrial Engineering GJRE-G Volume 23 (GJRE Volume 23 Issue G2): .
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
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