Neural Networks and Rules-based Systems used to Find Rational and Scientific Correlations between being Here and Now with Afterlife Conditions
Neural Networks and Rules-based Systems used to Find Rational and
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The study of doping concentration in the carrier storage region of IGBT is considered desirable in many power converter applications. This Letter presents base doping profile estimation through investigation into transient base charge modeling of Non-punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic profile has been used for base carrier concentration which consequently leads to an analytical model for transient base charge decay of IGBT. The proposed model shows better consistency compared to the previously used linear model in all doping profiles. Finally, the implications of doping dependence on the base charge decay are explained, including implementation of doping profile estimation technique.
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Avijit Das. 2016. \u201cBase Doping Profile Investigation into Transient Base Charge Modeling of IGBT\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 15 (GJRE Volume 15 Issue F9): .
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
The methods for personal identification and authentication are no exception.
The methods for personal identification and authentication are no exception.
Total Score: 103
Country: Bangladesh
Subject: Global Journal of Research in Engineering - F: Electrical & Electronic
Authors: Avijit Das, Md Nazmul Islam, Ziaur Rahman Khan (PhD/Dr. count: 0)
View Count (all-time): 189
Total Views (Real + Logic): 3804
Total Downloads (simulated): 1939
Publish Date: 2016 01, Fri
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The study of doping concentration in the carrier storage region of IGBT is considered desirable in many power converter applications. This Letter presents base doping profile estimation through investigation into transient base charge modeling of Non-punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic profile has been used for base carrier concentration which consequently leads to an analytical model for transient base charge decay of IGBT. The proposed model shows better consistency compared to the previously used linear model in all doping profiles. Finally, the implications of doping dependence on the base charge decay are explained, including implementation of doping profile estimation technique.
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