Base Doping Profile Investigation into Transient Base Charge Modeling of IGBT

1
Avijit Das
Avijit Das
2
Md Nazmul Islam
Md Nazmul Islam
3
Ziaur Rahman Khan
Ziaur Rahman Khan
1 Bangladesh University of Engineering & Technology

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The objective of our study was to evaluate, in a population of Togolese People Living With HIV(PLWHIV), the agreement between three scores derived from the general population namely the Framingham score, the Systematic Coronary Risk Evaluation (SCORE), the evaluation of the cardiovascular risk (CVR) according to the World Health Organization.
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The study of doping concentration in the carrier storage region of IGBT is considered desirable in many power converter applications. This Letter presents base doping profile estimation through investigation into transient base charge modeling of Non-punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic profile has been used for base carrier concentration which consequently leads to an analytical model for transient base charge decay of IGBT. The proposed model shows better consistency compared to the previously used linear model in all doping profiles. Finally, the implications of doping dependence on the base charge decay are explained, including implementation of doping profile estimation technique.

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12 Cites in Articles

References

  1. B Baliga (1979). Enhancement and Depletion Mode Vertical Channel MOSGated Thyristors.
  2. S Dewar,S Linder,C Arx,A Mukhitinov,G (2000). Soft Punch Through (SPT) -Setting new Standards in 1200V IGBT.
  3. T Laska,M Munzer,F Pfirsch,C Schaeffer,T Schmidt (null). The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential.
  4. C Sabatier,S Rack,H Beseaucele,J Venturini,T Hoffmann,E Rosseel,J Steenbergen (2008). Laser annealing of double implanted layers for IGBT Power Devices.
  5. T Gutt,H Schulze Deep melt activation using laser thermal annealing for IGBT thin wafer technology.
  6. Chunlin Zhu,Ian Deviny,Ben Yu,Lee Coulbeck,Gary Liu,Jim Thomson (2013). Optimization of p-emitter/n-buffer using laser annealing technique in IGBT design.
  7. Chunlin Zhu,Ian Deviny,Gary Liu,Andy Dai (2014). Study of failure mechanism in the modern IGBT with a highly doped N-buffer layer.
  8. V Khanna,A Kumar,S Sood,R Gupta,K Jasuja,B Maj,A Kostka (2001). Investigation of degeneracy of current-voltage characteristics of asymmetrical IGBT with n-buffer layer concentration.
  9. M Takai,T Naito,K Ueno (2004). Reverse Blocking IGBT for matrix converter with ultra-thin wafer technology.
  10. J Itoh,I Sato,A Odaka,H Ohguchi,H Kodachi,N Eguchi (2005). A Novel Approach to Practical Matrix Converter Motor Drive System With Reverse Blocking IGBT.
  11. A Das,Md Haq,Md Islam,Md Khan (2015). Based Stored Charge Modeling of Insulated Gate Bipolar Transistor.
  12. Allen Hefner,David Blackburn (1988). An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor.

Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

Avijit Das. 2016. \u201cBase Doping Profile Investigation into Transient Base Charge Modeling of IGBT\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 15 (GJRE Volume 15 Issue F9): .

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

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GJRE-F Classification: FOR Code: 090699
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v1.2

Issue date

January 15, 2016

Language

English

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The study of doping concentration in the carrier storage region of IGBT is considered desirable in many power converter applications. This Letter presents base doping profile estimation through investigation into transient base charge modeling of Non-punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic profile has been used for base carrier concentration which consequently leads to an analytical model for transient base charge decay of IGBT. The proposed model shows better consistency compared to the previously used linear model in all doping profiles. Finally, the implications of doping dependence on the base charge decay are explained, including implementation of doping profile estimation technique.

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Base Doping Profile Investigation into Transient Base Charge Modeling of IGBT

Avijit Das
Avijit Das Bangladesh University of Engineering & Technology
Md Nazmul Islam
Md Nazmul Islam
Ziaur Rahman Khan
Ziaur Rahman Khan

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