Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors

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SFR431T1

Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors

Dr. A.O. Sofiienko
Dr. A.O. Sofiienko Taras Shevchenko National University of Kyiv
V.Ya. Degoda
V.Ya. Degoda
V.N. Kilin
V.N. Kilin
DOI

Abstract

The concept of construction and stage-by-stage development of basic model of stationary X-ray induced conductivity for wide-gap semiconductors is proposed. Within the limits of first stage, calculation of spatial distribution of the generated electrons and holes in an ideal crystal which absorbs X-ray flux is carried out and volt-ampere characteristic is calculated.

Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors

The concept of construction and stage-by-stage development of basic model of stationary X-ray induced conductivity for wide-gap semiconductors is proposed. Within the limits of first stage, calculation of spatial distribution of the generated electrons and holes in an ideal crystal which absorbs X-ray flux is carried out and volt-ampere characteristic is calculated.

Dr. A.O. Sofiienko
Dr. A.O. Sofiienko Taras Shevchenko National University of Kyiv
V.Ya. Degoda
V.Ya. Degoda
V.N. Kilin
V.N. Kilin

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Dr. A.O. Sofiienko. 2012. “. Global Journal of Science Frontier Research – A: Physics & Space Science GJSFR-A Volume 12 (GJSFR Volume 12 Issue A3): .

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Crossref Journal DOI 10.17406/GJSFR

Print ISSN 0975-5896

e-ISSN 2249-4626

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Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors

Dr. A.O. Sofiienko
Dr. A.O. Sofiienko Taras Shevchenko National University of Kyiv
V.Ya. Degoda
V.Ya. Degoda
V.N. Kilin
V.N. Kilin

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