A TCAD Simulation Study of Cylindrical Gate All Around (CGAA) MOSFETs

Article ID

6KY3W

A TCAD Simulation Study of Cylindrical Gate All Around (CGAA) MOSFETs

Dr. Santosh K. Gupta
Dr. Santosh K. Gupta National Institute of Technology Silchar
S. Baishya
S. Baishya
DOI

Abstract

Due to aggressive scaling of transistors SCEs has become the limiting factor for further scaling of the conventional MOSFETs. To overcome this limitation a large number of new device architectures have been proposed. One of such device structures is cylindrical gate all around (CGAA) MOSFET that seems to be most suitable to be studied further for different applications point of view. In this paper we report the suitability analysis of CGAA MOSFETs for low voltage, low power and analog applications. We report many interesting findings through 3D TCAD simulations of CGAA MOSFETs.

A TCAD Simulation Study of Cylindrical Gate All Around (CGAA) MOSFETs

Due to aggressive scaling of transistors SCEs has become the limiting factor for further scaling of the conventional MOSFETs. To overcome this limitation a large number of new device architectures have been proposed. One of such device structures is cylindrical gate all around (CGAA) MOSFET that seems to be most suitable to be studied further for different applications point of view. In this paper we report the suitability analysis of CGAA MOSFETs for low voltage, low power and analog applications. We report many interesting findings through 3D TCAD simulations of CGAA MOSFETs.

Dr. Santosh K. Gupta
Dr. Santosh K. Gupta National Institute of Technology Silchar
S. Baishya
S. Baishya

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Dr. Santosh K. Gupta. 2012. “. Global Journal of Research in Engineering – F: Electrical & Electronic GJRE-F Volume 12 (GJRE Volume 12 Issue F9): .

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Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

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A TCAD Simulation Study of Cylindrical Gate All Around (CGAA) MOSFETs

Dr. Santosh K. Gupta
Dr. Santosh K. Gupta National Institute of Technology Silchar
S. Baishya
S. Baishya

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