Effect of Band Gap Difference and Doping Concentration on the Performance of an InxGa1-xN Based Multi Quantum Well Solar Cell

Article ID

3M902

Effect of Band Gap Difference and Doping Concentration on the Performance of an InxGa1-xN Based Multi Quantum Well Solar Cell

Nezam Uddin
Nezam Uddin Khulna University of Engineering and Technology
Atiqul Islam
Atiqul Islam
Md. Nasmus Sakib Khan Shabbir
Md. Nasmus Sakib Khan Shabbir
Aparajita Adhikary Poonam
Aparajita Adhikary Poonam
Md. Samiul Zahid
Md. Samiul Zahid
DOI

Abstract

Increasing the efficiency of solar cell is the prime concern in the field of photovoltaic technology as solar cell has become the promising source of renewable energy in recent years. This paper presents InxGa1-xN based multi quantum well solar cell for higher efficiency. In this paper the performance of the solar cell i.e., open circuit voltage, short circuit current and efficiency are justified with the variation of band gap difference and donor and acceptor doping concentration. The maximum efficiency is found when the baseline cell is designed at 1.424eV and the maximum efficiency is 30.17% and 31.94% for a band gap difference of 0.3eV and donor doping concentration of 5*1018 cm-3 respectively.

Effect of Band Gap Difference and Doping Concentration on the Performance of an InxGa1-xN Based Multi Quantum Well Solar Cell

Increasing the efficiency of solar cell is the prime concern in the field of photovoltaic technology as solar cell has become the promising source of renewable energy in recent years. This paper presents InxGa1-xN based multi quantum well solar cell for higher efficiency. In this paper the performance of the solar cell i.e., open circuit voltage, short circuit current and efficiency are justified with the variation of band gap difference and donor and acceptor doping concentration. The maximum efficiency is found when the baseline cell is designed at 1.424eV and the maximum efficiency is 30.17% and 31.94% for a band gap difference of 0.3eV and donor doping concentration of 5*1018 cm-3 respectively.

Nezam Uddin
Nezam Uddin Khulna University of Engineering and Technology
Atiqul Islam
Atiqul Islam
Md. Nasmus Sakib Khan Shabbir
Md. Nasmus Sakib Khan Shabbir
Aparajita Adhikary Poonam
Aparajita Adhikary Poonam
Md. Samiul Zahid
Md. Samiul Zahid

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Md Nasmus Sakib Khan Shabbir. 2014. “. Global Journal of Research in Engineering – F: Electrical & Electronic GJRE-F Volume 14 (GJRE Volume 14 Issue F4): .

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Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

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Effect of Band Gap Difference and Doping Concentration on the Performance of an InxGa1-xN Based Multi Quantum Well Solar Cell

Nezam Uddin
Nezam Uddin Khulna University of Engineering and Technology
Atiqul Islam
Atiqul Islam
Md. Nasmus Sakib Khan Shabbir
Md. Nasmus Sakib Khan Shabbir
Aparajita Adhikary Poonam
Aparajita Adhikary Poonam
Md. Samiul Zahid
Md. Samiul Zahid

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