Bio
Dr Md Alamgir Hossain (Senior Member, IEEE) received a B.Sc. Engg. in Electrical and Electronic Engineering (EEE) with First Class (1st) Honours from the Dhaka University of Engineering & Technology (DUET), Bangladesh, in 2012. After being awarded competitive scholarships, he successfully completed both his Master of Engineering and PhD programs in Electrical Engineering at the University of New South Wales (UNSW), Australia, in 2016 and 2019, respectively. Throughout his academic career, he has been awarded several prestigious scholarships, including the University International Postgraduate Award, University College Postgraduate Research Scholarship, and UNSW Canberra - Study Canberra Scholarship. Additionally, he has received numerous awards for his research, such as World's Top 2% Scientists, the Best Research Presenter (Poster), Second-Best Presenter at UNSW Canberra Research Days, Top Peer Reviewer, Outstanding Reviewer from Elsevier, Prime Minister and President Gold Medals. Dr Hossain has published 110+ papers in esteemed journals and international conferences in his field. He has secured over $1.6 million in research funding from national and international agencies and has established extensive collaborations across 32 countries with 99 universities, covering 14 multidisciplinary research areas (according to WoS). His research ranks among the Top 2% Scientists of 2021-25, recognized by Stanford University and Elsevier. With over 5,000 citations, he holds an H-index of 35 (Google Scholar) and an FWCI of 2.43. Dr. Hossain has successfully co-supervised five research students to completion and currently supervises six others. In recognition of his contributions, he was promoted to Senior Member of the Institute of Electrical and Electronics Engineers (IEEE) in 2023. Currently, Dr Hossain is working as a Senior Lecturer in Electrical and Electronic Engineering at the University of Southern Queensland, Toowoomba QLD 4350, Australia. Previously, He was a full-time Senior Research Fellow at Queensland Micro-and Nano-technology Centre, Griffith University, Australia. He has built a hydrogen DC microgrid lab for research and industry-standard purposes, which is funded by the Blue Economy Cooperative Research Centre. The lab has emerged as a pivotal focus for industry partners, capturing their keen interest in exploring transient impacts during disturbances and optimising power management strategies to curtail operational costs. Prior to joining Griffith University, he worked as a full-time Postdoc Research Associate at UNSW, Australia for one and a half years. He has also worked as a Lecturer and Assistant Professor at Dhaka University of Engineering and Technology (DUET), Bangladesh for eight years. His research interests include hydrogen DC microgrids, renewable energy integration, artificial intelligence, optimisation algorithms, robust control, energy management systems, and energy storage systems.
Educational Journey
University of New South Wales
PhD Candidature in School of Engineering and Technology • School of Engineering and Technology
2019Dhaka University of Engineering and Technology
B.Sc. in Engineering in Electrical and Electronics Engineering • Electrical and Electronics Engineering
2012UNSW Australia
Masters by Research • Microgrids, Smart grids
Experience
Senior Lecturer
2025 - Present • Electrical and Electronic EngineeringSenior Research Fellow
2021 - 2025 • QMNCAssistant Professor
2012 - 2021 • Electrical and Electronics EngineeringAffiliations
IEEE
Senior Member
Member since 2023Grants and Awards
University International Postgraduate Award
University College Postgraduate Research Scholarship
UNSW Canberra - Study Canberra Scholarship
World's Top 2% Scientists
Best Research Presenter (Poster)
Second-Best Presenter at UNSW Canberra Research Days
Top Peer Reviewer
Outstanding Reviewer from Elsevier
Prime Minister and President Gold Medals
Research
Capacitance-Voltage characteristics of nanowire trigate MOSFET considering wave function penetration
Capacitance is the heart of MOSFET because of its application in the real life. Capacitance indicates switching speed of the MOSFET. It is our goal to minimize capacitance as possible as we can in MOSFET. Due to our necessary to compact the Integrated Circuit as possible as we can for getting small electronics devices. Capacitance determine the speed of the IC. Every engineer in this section should know capacitance of his implementing device MOSFET to get exert result from this device. Whenever we deal with 10X10 nm scale or less device of MOSFET. We must be concerned the effect of wave function penetration into device in this stage classical mechanics fails to describe exact result of the system because electron can move in only one direction (say x) where in 3Dimention, it cannot move in other two direction (y, z). i.e. confined in two direction which is not predictable by classical mechanics here quantum mechanics (QM) gives better solution of this problem. Therefore we consider QM in our study. Here we presented how wave function play vital role when you consider small area of trigate MOSFET. This result will be helpful when you are determining capacitance of trigate MOSFET.
Electrical Characteristics of trigate FinFET
FinFET devices are comprehensively investigated owing to the projection for application in the CMOS integrated circuits fabrication. Deducing MOSFET size have great influence on electrostatic characteristic.The indiscriminate variations of the characteristics lead to a divergence effect which is imperative from the point of view of design and manufacture. We have considered only n-channel devices. The behaviors of hole mobility of multigate devices is of course of great importance [1-2]. Electron mobility of n-channel FinFET has simulated with respect to effective electric field. Mobility degradation has been observed with thinner silicon film, at higher electric field, which can be attributed to "volume inversion" in FinFET. In this paper, different types of electrical characteristics have been simulated for different operating regions and different channel lengths and also for different oxide thickness. The considerations are illustrated with measurement data of a series of devices and with distributions of the parameters extracted from these data. The analytical expressions in this work can be useful tool in device design and optimization.
