Research
Influence of Magnetic Field on Electrical Model and Electrical Parameters of a Solar Cell under Intense Multispectral Illumination
In this work we present a 3D modeling of the magnetic field influence on electrical model and electrical parameters (Jph, Vph, Rs, Rsh, C) of a polycrystalline silicon solar cell under intense multispectral illumination. For intense light, the electric field in the base of the solar cell has to be considered; taking into account this electric field and the applied magnetic field in our model lead to two major things: Firstly, new analytical expressions of the continuity equation, the photocurrent and the photovoltage are proposed; secondly an equivalent electrical model of the solar cell under constant magnetic field is proposed and the influence of the magnetic field is pointed out on electrical parameters such as shunt and series resistances and space charge capacitance.
Using Gaussas Law in Determinating the Width Emitter Extension Region of the Solar Cell Operating in Open Circuit Condition
In this article, we are discussing the Gauss’s law used to determine the width emitter extension region of the solar cell operating in open circuit condition. Taking into account the grain size (g), the grain boundary recombination velocity (Sgb) and the emitter doping density (Nemitter), the Gaussian Law helped us to calculate the width emitter extension region of the solar cell operating in open circuit condition. To determine the width emitter extension region, we first showed that grain size (g), grain boundary recombination velociy (Sgb) are oppesite effects and concluded that best solar cells are characterized by low junction extension region width observed only with high grain size (g) and low grain boundary recombination velocity (Sgb).
