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Thin films (average thickness ~1132, 2236, and 3785 nm) of polystyrene with a hydroxyl end group, PSOH (Mw= 70345 g.mol) were supported on SiO 2 monolith disks (thickness ~ 0.2, 0.4, and 0.6 cm) to measure its thermal conductivity response using the Lee’s Disk method. The various analyses were carried out over a 40 minute period at intervals of 5 minutes, at a temperature range of 20 to 110Β°C, as a function of PSOH film and monolith disk thickness. As a result, an extremely low thermal conductivity was determined in reference to the individual materials. Additionally, the thermal conductivity was unaltered as a result of the variation of the film and monolith thickness. In contrast, the hardness and ductile behavior were increased by increasing the thickness of the PSOH film. As a result of this, monoliths with a PSOH film of 3782 nm thicknesses (and load of 100 gf) were considered materials of intermediate hardness (value of 31.5720 GPa). In addition, FTIR was the technique employed to establish the PSOH and SiO 2 monolith structures.
Salomon Ramiro Vasquez Garcia. 2012. \u201cA Film of Polystyrene Hydroxyl End Group Supported On Sio2 Monoliths: Thermal Conductivity and Micro-Indentation\u201d. Global Journal of Science Frontier Research - B: Chemistry GJSFR-B Volume 12 (GJSFR Volume 12 Issue B6): .
Crossref Journal DOI 10.17406/GJSFR
Print ISSN 0975-5896
e-ISSN 2249-4626
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Total Score: 111
Country: Mexico
Subject: Global Journal of Science Frontier Research - B: Chemistry
Authors: Dr. O.Gutirrez-Arriaga, S.R. VAsquez-GarcAa, N. Flores-RamArez, G. Luna-BArcenas, G. Barrera-Cardiel, C.A. LeAn-PatiAo (PhD/Dr. count: 1)
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Publish Date: 2012 11, Thu
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Thin films (average thickness ~1132, 2236, and 3785 nm) of polystyrene with a hydroxyl end group, PSOH (Mw= 70345 g.mol) were supported on SiO 2 monolith disks (thickness ~ 0.2, 0.4, and 0.6 cm) to measure its thermal conductivity response using the Lee’s Disk method. The various analyses were carried out over a 40 minute period at intervals of 5 minutes, at a temperature range of 20 to 110Β°C, as a function of PSOH film and monolith disk thickness. As a result, an extremely low thermal conductivity was determined in reference to the individual materials. Additionally, the thermal conductivity was unaltered as a result of the variation of the film and monolith thickness. In contrast, the hardness and ductile behavior were increased by increasing the thickness of the PSOH film. As a result of this, monoliths with a PSOH film of 3782 nm thicknesses (and load of 100 gf) were considered materials of intermediate hardness (value of 31.5720 GPa). In addition, FTIR was the technique employed to establish the PSOH and SiO 2 monolith structures.
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