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Wide fan-in logic gates when implemented in static complementary CMOS logic consume a significant area overhead, consume a large power consumption, and have a large propagation delay. In this paper, a pseudo-PMOS logic is presented for the realization of wide fan-in NAND gates in a manner similar to the realization of wide fan-in NOR gates using the pseudo-NMOS logic. The circuit design issues of this family are discussed. Also, it is compared with the conventional CMOS logic from the points of view of the area, the average propagation delay, the average power consumption, and the logic swing using a proper figure of merit. The effects of technology scaling and process variations on this family are investigated. Simulation results verify the enhancement in performance in which the 45 nm CMOS technology is adopted.
Sherif Sharroush. 2017. "A Pseudo-PMOS Logic for Realizing Wide Fan-In NAND Gates". Global Journal of Research in Engineering, Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 17 (GJRE Volume 17 Issue F7).
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
v1.2
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Total Score: 101
Country: Egypt
Subject: Global Journal of Research in Engineering
Authors: Sherif M. Sharroush (PhD/Dr. count: 0)
View Count (all-time): 407
Total Views (Real + Logic): 970
Total Downloads (simulated): 49
Publish Date: 2017 01, Sun
Monthly Totals (Real + Logic):
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