A TCAD Simulation Study of Cylindrical Gate All Around (CGAA) MOSFETs

1
Dr. Santosh K. Gupta
Dr. Santosh K. Gupta
2
S. Baishya
S. Baishya
1 National Institute of Technology Silchar

Send Message

To: Author

GJRE Volume 12 Issue F9

Article Fingerprint

ReserarchID

6KY3W

A TCAD Simulation Study of Cylindrical Gate All Around (CGAA) MOSFETs Banner
  • English
  • Afrikaans
  • Albanian
  • Amharic
  • Arabic
  • Armenian
  • Azerbaijani
  • Basque
  • Belarusian
  • Bengali
  • Bosnian
  • Bulgarian
  • Catalan
  • Cebuano
  • Chichewa
  • Chinese (Simplified)
  • Chinese (Traditional)
  • Corsican
  • Croatian
  • Czech
  • Danish
  • Dutch
  • Esperanto
  • Estonian
  • Filipino
  • Finnish
  • French
  • Frisian
  • Galician
  • Georgian
  • German
  • Greek
  • Gujarati
  • Haitian Creole
  • Hausa
  • Hawaiian
  • Hebrew
  • Hindi
  • Hmong
  • Hungarian
  • Icelandic
  • Igbo
  • Indonesian
  • Irish
  • Italian
  • Japanese
  • Javanese
  • Kannada
  • Kazakh
  • Khmer
  • Korean
  • Kurdish (Kurmanji)
  • Kyrgyz
  • Lao
  • Latin
  • Latvian
  • Lithuanian
  • Luxembourgish
  • Macedonian
  • Malagasy
  • Malay
  • Malayalam
  • Maltese
  • Maori
  • Marathi
  • Mongolian
  • Myanmar (Burmese)
  • Nepali
  • Norwegian
  • Pashto
  • Persian
  • Polish
  • Portuguese
  • Punjabi
  • Romanian
  • Russian
  • Samoan
  • Scots Gaelic
  • Serbian
  • Sesotho
  • Shona
  • Sindhi
  • Sinhala
  • Slovak
  • Slovenian
  • Somali
  • Spanish
  • Sundanese
  • Swahili
  • Swedish
  • Tajik
  • Tamil
  • Telugu
  • Thai
  • Turkish
  • Ukrainian
  • Urdu
  • Uzbek
  • Vietnamese
  • Welsh
  • Xhosa
  • Yiddish
  • Yoruba
  • Zulu

Due to aggressive scaling of transistors SCEs has become the limiting factor for further scaling of the conventional MOSFETs. To overcome this limitation a large number of new device architectures have been proposed. One of such device structures is cylindrical gate all around (CGAA) MOSFET that seems to be most suitable to be studied further for different applications point of view. In this paper we report the suitability analysis of CGAA MOSFETs for low voltage, low power and analog applications. We report many interesting findings through 3D TCAD simulations of CGAA MOSFETs.

Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

Dr. Santosh K. Gupta. 2012. \u201cA TCAD Simulation Study of Cylindrical Gate All Around (CGAA) MOSFETs\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 12 (GJRE Volume 12 Issue F9): .

Download Citation

Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Classification
Not Found
Version of record

v1.2

Issue date

September 3, 2012

Language

English

Experiance in AR

The methods for personal identification and authentication are no exception.

Read in 3D

The methods for personal identification and authentication are no exception.

Article Matrices
Total Views: 5245
Total Downloads: 2520
2026 Trends
Research Identity (RIN)
Related Research

Published Article

Due to aggressive scaling of transistors SCEs has become the limiting factor for further scaling of the conventional MOSFETs. To overcome this limitation a large number of new device architectures have been proposed. One of such device structures is cylindrical gate all around (CGAA) MOSFET that seems to be most suitable to be studied further for different applications point of view. In this paper we report the suitability analysis of CGAA MOSFETs for low voltage, low power and analog applications. We report many interesting findings through 3D TCAD simulations of CGAA MOSFETs.

Our website is actively being updated, and changes may occur frequently. Please clear your browser cache if needed. For feedback or error reporting, please email [email protected]
×

This Page is Under Development

We are currently updating this article page for a better experience.

Request Access

Please fill out the form below to request access to this research paper. Your request will be reviewed by the editorial or author team.
X

Quote and Order Details

Contact Person

Invoice Address

Notes or Comments

This is the heading

Lorem ipsum dolor sit amet, consectetur adipiscing elit. Ut elit tellus, luctus nec ullamcorper mattis, pulvinar dapibus leo.

High-quality academic research articles on global topics and journals.

A TCAD Simulation Study of Cylindrical Gate All Around (CGAA) MOSFETs

Dr. Santosh K. Gupta
Dr. Santosh K. Gupta National Institute of Technology Silchar
S. Baishya
S. Baishya

Research Journals