Neural Networks and Rules-based Systems used to Find Rational and Scientific Correlations between being Here and Now with Afterlife Conditions
Neural Networks and Rules-based Systems used to Find Rational and
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Due to aggressive scaling of transistors SCEs has become the limiting factor for further scaling of the conventional MOSFETs. To overcome this limitation a large number of new device architectures have been proposed. One of such device structures is cylindrical gate all around (CGAA) MOSFET that seems to be most suitable to be studied further for different applications point of view. In this paper we report the suitability analysis of CGAA MOSFETs for low voltage, low power and analog applications. We report many interesting findings through 3D TCAD simulations of CGAA MOSFETs.
Dr. Santosh K. Gupta. 2012. \u201cA TCAD Simulation Study of Cylindrical Gate All Around (CGAA) MOSFETs\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 12 (GJRE Volume 12 Issue F9): .
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
The methods for personal identification and authentication are no exception.
Total Score: 107
Country: India
Subject: Global Journal of Research in Engineering - F: Electrical & Electronic
Authors: Dr. Santosh K. Gupta, S. Baishya (PhD/Dr. count: 1)
View Count (all-time): 193
Total Views (Real + Logic): 5245
Total Downloads (simulated): 2520
Publish Date: 2012 09, Mon
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Neural Networks and Rules-based Systems used to Find Rational and
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Due to aggressive scaling of transistors SCEs has become the limiting factor for further scaling of the conventional MOSFETs. To overcome this limitation a large number of new device architectures have been proposed. One of such device structures is cylindrical gate all around (CGAA) MOSFET that seems to be most suitable to be studied further for different applications point of view. In this paper we report the suitability analysis of CGAA MOSFETs for low voltage, low power and analog applications. We report many interesting findings through 3D TCAD simulations of CGAA MOSFETs.
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