To: Author

Article Fingerprint
ReserarchID
RE6KY3W
Choose where you want to hide AI Takeaway. Your site-wide choice will be remembered in this browser.
Due to aggressive scaling of transistors SCEs has become the limiting factor for further scaling of the conventional MOSFETs. To overcome this limitation a large number of new device architectures have been proposed. One of such device structures is cylindrical gate all around (CGAA) MOSFET that seems to be most suitable to be studied further for different applications point of view. In this paper we report the suitability analysis of CGAA MOSFETs for low voltage, low power and analog applications. We report many interesting findings through 3D TCAD simulations of CGAA MOSFETs.
Dr. Santosh K. Gupta, S. Baishya. 2012. "A TCAD Simulation Study of Cylindrical Gate All Around (CGAA) MOSFETs". Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 12 (GJRE Volume 12 Issue F9).
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
v1.2
Explore published articles in an immersive Augmented Reality environment. Our platform converts research papers into interactive 3D books, allowing readers to view and interact with content using AR and VR compatible devices.
Your published article is automatically converted into a realistic 3D book. Flip through pages and read research papers in a more engaging and interactive format.
Total Score: 107
Country: India
Subject: Global Journal of Research in Engineering
Authors: Dr. Santosh K. Gupta, S. Baishya (PhD/Dr. count: 1)
View Count (all-time): 363
Total Views (Real + Logic): 1204
Total Downloads (simulated): 95
Publish Date: 2012 03, Thu
Monthly Totals (Real + Logic):
We use cookies and similar technologies to improve site performance, understand traffic, and enhance your publishing experience. Cookie Policy
Choose which optional cookies Global Journals can use. Your preference applies across this platform and can be updated any time.
These cookies are required for core website functionality and security.
Lorem ipsum dolor sit amet, consectetur adipiscing elit. Ut elit tellus, luctus nec ullamcorper mattis, pulvinar dapibus leo.