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ReserarchID
CSTNWSHLEHR
Crossref Journal DOI 10.17406/gjcst
Print ISSN 0975-4350
e-ISSN 0975-4172
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An enhanced architecture for a broadband power amplifier (PA) for LTE and WCDMA handsets using In GaP/Ga As hetero-junction bipolar transistor (HBT) process is presented. A two-stage PA solution adopting switchable driver-stage amplifier without employing input switch is proposed to reduce loss and help with power efficiency improvement. Furthermore, in order to enhance the power-added efficiency (PAE) at the low output power level, a two-chain amplifying structure in parallel has been implemented. For wideband 1.71-1.98GHz, the fabricated PA shows >27dB of Gain and >38% of PAE with 16dB of Gain and >13% of PAE with
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