Architecture Considerations of LTE/WCDMA Wideband Power Amplifier for Efficiency Improvement

Architecture Considerations of LTE/WCDMA Wideband Power Amplifier for Efficiency Improvement

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Abstract

An enhanced architecture for a broadband power amplifier (PA) for LTE and WCDMA handsets using In GaP/Ga As hetero-junction bipolar transistor (HBT) process is presented. A two-stage PA solution adopting switchable driver-stage amplifier without employing input switch is proposed to reduce loss and help with power efficiency improvement. Furthermore, in order to enhance the power-added efficiency (PAE) at the low output power level, a two-chain amplifying structure in parallel has been implemented. For wideband 1.71-1.98GHz, the fabricated PA shows >27dB of Gain and >38% of PAE with 16dB of Gain and >13% of PAE with

Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Abdulraqeb Abdullah Saeed Abdo, Jie Ling, Pinghua Chen. 2019. "Architecture Considerations of LTE/WCDMA Wideband Power Amplifier for Efficiency Improvement". Global Journal of Computer Science and Technology - E: Network, Web & Security GJCST-E Volume 19 (GJCST Volume 19 Issue E3).

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Journal Specifications

Crossref Journal DOI 10.17406/gjcst

Print ISSN 0975-4350

e-ISSN 0975-4172

Keywords
Classification
GJCST-E Classification C.2.m
Version of record

v1.2

Issue date
October 14, 2019

Language
English
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Architecture Considerations of LTE/WCDMA Wideband Power Amplifier for Efficiency Improvement

Abdulraqeb Abdo
Abdulraqeb Abdo
Jie Ling
Jie Ling
Pinghua Chen
Pinghua Chen