Bangladesh University of Engineering & TechnologyTo: Author

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The study of doping concentration in the carrier storage region of IGBT is considered desirable in many power converter applications. This Letter presents base doping profile estimation through investigation into transient base charge modeling of Non-punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic profile has been used for base carrier concentration which consequently leads to an analytical model for transient base charge decay of IGBT. The proposed model shows better consistency compared to the previously used linear model in all doping profiles. Finally, the implications of doping dependence on the base charge decay are explained, including implementation of doping profile estimation technique.
Avijit Das, Md Islam. 2016. "Base Doping Profile Investigation into Transient Base Charge Modeling of IGBT". Global Journal of Research in Engineering, Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 15 (GJRE Volume 15 Issue F9).
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
v1.2
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Total Score: 103
Country: Bangladesh
Subject: Global Journal of Research in Engineering
Authors: Avijit Das, Md Nazmul Islam, Ziaur Rahman Khan (PhD/Dr. count: 0)
View Count (all-time): 410
Total Views (Real + Logic): 998
Total Downloads (simulated): 65
Publish Date: 2015 03, Sun
Monthly Totals (Real + Logic):
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