Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors

Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors

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Dr. A.O. Sofiienko

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V.Ya. Degoda

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V.N. Kilin

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Taras Shevchenko National University of Kyiv

Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors

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Abstract

The concept of construction and stage-by-stage development of basic model of stationary X-ray induced conductivity for wide-gap semiconductors is proposed. Within the limits of first stage, calculation of spatial distribution of the generated electrons and holes in an ideal crystal which absorbs X-ray flux is carried out and volt-ampere characteristic is calculated.

References

12 Cites in Article

Reference Format

Gerhard Lutz (2003). Unknown Title.
Owens,A Peacock (2004). Unknown Title.
A Rybka,L Davydov,I Shlyakhov,V Kutny,I Prokhoretz,D Kutny,A Orobinsky (2004). Gamma-radiation dosimetry with semiconductor CdTe and CdZnTe detectors.
P Sellina,J Vaitkus (2006). Unknown Title.
V Degoda,A Sofiienko (2010). Effect of traps on the current impulse from X-ray induced conductivity in wide-gap semiconductors.
P Unknown Title.
Andrii Sofiienko,Volodimir Degoda (2012). X-ray induced conductivity of ZnSe sensors at high temperatures.
Ha Ho,Yong Jang,Se Kyun Kima,Hwan Parka,Sang Kang (2007). Unknown Title.
A Ivanov,N Strokan,A Lebedev (2008). Unknown Title.
V Degoda,Ya,A Sofiienko (2010). Unknown Title.
V Degoda,Ya,A Sofiienko (2010). Unknown Title.
W Shockley (1938). Currents to Conductors Induced by a Moving Point Charge.

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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Dr. A.O. Sofiienko. 2012. \u201cBasic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors\u201d. Global Journal of Science Frontier Research - A: Physics & Space Science GJSFR-A Volume 12 (GJSFR Volume 12 Issue A3): .

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GJSFR Volume 12 Issue A3
Pg. 9- 11

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Journal Specifications

Crossref Journal DOI 10.17406/GJSFR

Print ISSN 0975-5896

e-ISSN 2249-4626

Keywords

conductivity detector model radiation semiconductor stationary X-ray ZnSe

Submission ReceivedFebruary 13, 2012
Peer Review Double Blind
Handling Editor
Accepted March 7, 2012
Published March 20, 2012

Version of record

v1.2

Issue date

April 7, 2012

Language

en

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Article Matrices

Total Score: 108

Country: Ukraine

Subject: Global Journal of Science Frontier Research - A: Physics & Space Science

Authors: Dr. A.O. Sofiienko, V.Ya. Degoda, V.N. Kilin (PhD/Dr. count: 1)

View Count (all-time): 166

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Publish Date: 2012 04, Sat

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Total Views: 5312

Total Downloads: 2836

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The concept of construction and stage-by-stage development of basic model of stationary X-ray induced conductivity for wide-gap semiconductors is proposed. Within the limits of first stage, calculation of spatial distribution of the generated electrons and holes in an ideal crystal which absorbs X-ray flux is carried out and volt-ampere characteristic is calculated.

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