Taras Shevchenko National University of KyivTo: Author

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431T1
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The concept of construction and stage-by-stage development of basic model of stationary X-ray induced conductivity for wide-gap semiconductors is proposed. Within the limits of first stage, calculation of spatial distribution of the generated electrons and holes in an ideal crystal which absorbs X-ray flux is carried out and volt-ampere characteristic is calculated.
Dr. Sofiienko, V.Ya. Degoda, V.N. Kilin. 2012. "Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors". Global Journal of Science Frontier Research, Global Journal of Science Frontier Research - A: Physics & Space Science GJSFR-A Volume 12 (GJSFR Volume 12 Issue A3).
Crossref Journal DOI 10.17406/GJSFR
Print ISSN 0975-5896
e-ISSN 2249-4626
v1.2
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Total Score: 152
Country: Ukraine
Subject: Global Journal of Science Frontier Research
Authors: Dr. A.O. Sofiienko, V.Ya. Degoda, V.N. Kilin (PhD/Dr. count: 1)
View Count (all-time): 307
Total Views (Real + Logic): 1352
Total Downloads (simulated): 72
Publish Date: 2012 03, Tue
Monthly Totals (Real + Logic):
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