Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors

§ Taras Shevchenko National University of Kyiv Taras Shevchenko National University of Kyiv

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Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors

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Abstract

The concept of construction and stage-by-stage development of basic model of stationary X-ray induced conductivity for wide-gap semiconductors is proposed. Within the limits of first stage, calculation of spatial distribution of the generated electrons and holes in an ideal crystal which absorbs X-ray flux is carried out and volt-ampere characteristic is calculated.

References

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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Dr. Sofiienko, V.Ya. Degoda, V.N. Kilin. 2012. "Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors". Global Journal of Science Frontier Research, Global Journal of Science Frontier Research - A: Physics & Space Science GJSFR-A Volume 12 (GJSFR Volume 12 Issue A3).

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Journal Specifications

Crossref Journal DOI 10.17406/GJSFR

Print ISSN 0975-5896

e-ISSN 2249-4626

Keywords
Classification
GJSFR-A Classification FOR Code: 020404
Version of record

v1.2

Issue date
April 7, 2012

Language
English
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Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors

Dr. Sofiienko
Dr. Sofiienko Taras Shevchenko National University of Kyiv
V.Ya. Degoda
V.Ya. Degoda
V.N. Kilin
V.N. Kilin