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ReserarchID
FYZ86
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
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Proto-type Silicon Drift Detectors (SDDs) have been realized through a pilot stage fabrication run at the Micro-fabrication facility at Indian Institute of Technology -Bombay (IIT-B). Taking precedence from the fabrication run at IIT-B, commercial grade SDDs with on-chip low noise JFETs are being developed for low energy X-ray spectroscopy and position sensing applications using silicon bipolar technology available with Bharat Electronics Ltd (BEL), Bangalore. This paper presents a detailed illustrative view on the design; fabrication and characterization of the SDDs & in-built JFETs fabricated at BEL. Traditionally, detectors are fabricated over high resistivity silicon substrates whereas JFETs are fabricated over low-resistivity silicon. To design a process for fabrication of both SDD and JFET over high resistivity silicon posed a sufficient technological challenge.
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