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Proto-type Silicon Drift Detectors (SDDs) have been realized through a pilot stage fabrication run at the Micro-fabrication facility at Indian Institute of Technology -Bombay (IIT-B). Taking precedence from the fabrication run at IIT-B, commercial grade SDDs with on-chip low noise JFETs are being developed for low energy X-ray spectroscopy and position sensing applications using silicon bipolar technology available with Bharat Electronics Ltd (BEL), Bangalore. This paper presents a detailed illustrative view on the design; fabrication and characterization of the SDDs & in-built JFETs fabricated at BEL. Traditionally, detectors are fabricated over high resistivity silicon substrates whereas JFETs are fabricated over low-resistivity silicon. To design a process for fabrication of both SDD and JFET over high resistivity silicon posed a sufficient technological challenge.
Dr. Dr. Pourus Mehta. 2012. "Development of Commercial Grade Silicon Drift Detector with on-Chip JFET: Device Design, Technology & Characterization". Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 12 (GJRE Volume 12 Issue F11).
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
v1.2
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Total Score: 112
Country: India
Subject: Global Journal of Research in Engineering - F: Electrical & Electronic
Authors: Dr. Pourus Mehta , Sudheer K.M, V.D. Srivastava, Rejeena Rani, V.B Chandratre, Y.P. Prabhakara Rao, C.K. Pithawa (PhD/Dr. count: 1)
View Count (all-time): 442
Total Views (Real + Logic): 1207
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Publish Date: 2012 03, Thu
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