Development of Commercial Grade Silicon Drift Detector with on-Chip JFET: Device Design, Technology & Characterization

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Development of Commercial Grade Silicon Drift Detector with on-Chip JFET: Device Design, Technology & Characterization

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Abstract

Proto-type Silicon Drift Detectors (SDDs) have been realized through a pilot stage fabrication run at the Micro-fabrication facility at Indian Institute of Technology -Bombay (IIT-B). Taking precedence from the fabrication run at IIT-B, commercial grade SDDs with on-chip low noise JFETs are being developed for low energy X-ray spectroscopy and position sensing applications using silicon bipolar technology available with Bharat Electronics Ltd (BEL), Bangalore. This paper presents a detailed illustrative view on the design; fabrication and characterization of the SDDs & in-built JFETs fabricated at BEL. Traditionally, detectors are fabricated over high resistivity silicon substrates whereas JFETs are fabricated over low-resistivity silicon. To design a process for fabrication of both SDD and JFET over high resistivity silicon posed a sufficient technological challenge.

References

6 Cites in Article
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  5. 5. Pourus Mehta,* Sudheer,K (2011). Studies of the Silicon Drift Detector: Design, Technology Development, Characterization & Physics Simulations. Armenian Journal of Physics, 4(3), 175-192.
  6. 6. Development of Commercial Grade Silicon Drift Detector with On-Chip JFET: Device Design. Technology & Characterization

Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Dr. Dr. Pourus Mehta. 2012. "Development of Commercial Grade Silicon Drift Detector with on-Chip JFET: Device Design, Technology & Characterization". Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 12 (GJRE Volume 12 Issue F11).

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Keywords
Classification
PACS 85.30.-z
85.30.De & 85.30.Tv
Version of record

v1.2

Issue date
October 25, 2012

Language
English
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Development of Commercial Grade Silicon Drift Detector with on-Chip JFET: Device Design, Technology & Characterization

Dr. Mehta
Dr. Mehta Bhabha Atomic Research Centre
Dr. Mehta
Dr. Mehta <p>Bhabha Atomic Research Centre</p>