Neural Networks and Rules-based Systems used to Find Rational and Scientific Correlations between being Here and Now with Afterlife Conditions
February 17, 2026
Neural Networks and Rules-based Systems used to Find Rational and
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SFR0638J
The electronic structure of homogeneous and inhomogeneous quantum dots involves fascinating optoelectronic properties. Herein, a detailed theoretical and numerical investigation of the electronic structure of spherical inhomogeneous quantum dots InN/In x Ga 1-x N/Ligand, based Indium and Gallium Nitride, with a variable composition x of Indium. A more real profile is adopted with a finite potential shell and variable thickness. The ligand and solution impose external confinement. With such shell In x Ga 1-x N, a minimum of defects is ensured at the interface, and the structure is passivated. Along with this work, we will explore the effects of the various parameters of this nanosystem on its gap, on the location of charge carriers and the distribution of nS-nP energy levels. We will show how the dimensions of the material core InN, the material shell In x Ga 1-x N, and the Indium-composition x control the characteristics of the nanosystem and consequently improve the electronic and optical properties. Then a detailed calculation of the electronic structure will be made.
Farid Benhaddou. 2020. \u201cEffects of Indium Composition and the Size on the Electronic Structure nS-nP of Quantum Dots InN/InxGa1-xN/Ligand\u201d. Global Journal of Science Frontier Research - A: Physics & Space Science GJSFR-A Volume 20 (GJSFR Volume 20 Issue A8): .
Crossref Journal DOI 10.17406/GJSFR
Print ISSN 0975-5896
e-ISSN 2249-4626
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The electronic structure of homogeneous and inhomogeneous quantum dots involves fascinating optoelectronic properties. Herein, a detailed theoretical and numerical investigation of the electronic structure of spherical inhomogeneous quantum dots InN/In x Ga 1-x N/Ligand, based Indium and Gallium Nitride, with a variable composition x of Indium. A more real profile is adopted with a finite potential shell and variable thickness. The ligand and solution impose external confinement. With such shell In x Ga 1-x N, a minimum of defects is ensured at the interface, and the structure is passivated. Along with this work, we will explore the effects of the various parameters of this nanosystem on its gap, on the location of charge carriers and the distribution of nS-nP energy levels. We will show how the dimensions of the material core InN, the material shell In x Ga 1-x N, and the Indium-composition x control the characteristics of the nanosystem and consequently improve the electronic and optical properties. Then a detailed calculation of the electronic structure will be made.
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