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ReserarchID
8L8LV
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
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Thin films of tin disulfide (SnS 2 ) semiconductor have been fabricated using spray pyrolysis method. SnS 2 were deposited from aqueous solution containing SnCl 4 , 2H 2 O and CS(NH 2 ) 2 at various molar concentrations. The structural, morphological and optical properties of the obtained films were investigated. XRD and SEM data suggest that good quality of SnS 2 is obtained at 0.08 mol/l. The optical analyses show that the films prepared at 0.08 mol/l present the highest transmittance in the visible region. The obtained results confirm that SnS 2 thin films can be good candidates for solar cells devices. These results are of great importance in the prediction of the good application of SnS 2 thin films in solar cells.
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