Electronic Transport Properties in Bulk ZnO and Zn1-xMgxO Using Monte Carlo Simulation

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H. Arabshahi
H. Arabshahi
2
F. Nofeli
F. Nofeli
1 Physics Department, Khayyam University, Mashhad, Iran

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Electronic Transport Properties in Bulk ZnO and Zn1-xMgxO  Using Monte Carlo Simulation Banner
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In this paper, an investigation with the application of Monte Carlo simulations to steadystate electron transport and low-field electron mobility characteristics of in bulk ZnO in the wurtzite crystal structure and its alloy Zn 1-x Mg x O with different doping of Mg, x=0.05, 0.1 and 0.2. The Monte Carlo calculations are carried out using a three-valley model for the systems under consideration. The following scattering mechanisms, i.e, impurity, polar optical phonon and acoustic phonon are included in the calculation. The maximum electron drift velocity that is obtained at room temperature for 10 23 m -3 donor concentration is 1.97×10 7 cms -1 for ZnO in threshold field of 400 kV/cm. While the maximum electron drift velocity is 1.62×10 7 cms -1 , 1.03×10 7 cms -1 and 0.43×10 7 cms -1 for Zn 0.95 Mg 0.05 O, Zn 0.9 Mg 0.1 O and Zn 0.8 Mg 0.2 O in threshold field 700 kV/cm respectively. It can be seen the peak drift velocity for bulk ZnO is 1.97×10 7 cms -1 , while for Zn 1_x Mg x O the peak drift velocity decreases due to increasing electron effective mass.

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References

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  3. A Guen-Bouazza,C Sayah,B Bouazza,N Chabane-Sari (2013). Steady-State and Transient Electron Transport within Bulk InAs, InP and GaAs: An Updated Semiclassical Three-Valley Monte Carlo Simulation Analysis.
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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

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No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

H. Arabshahi. 2015. \u201cElectronic Transport Properties in Bulk ZnO and Zn1-xMgxO Using Monte Carlo Simulation\u201d. Global Journal of Science Frontier Research - A: Physics & Space Science GJSFR-A Volume 15 (GJSFR Volume 15 Issue A3): .

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GJSFR Volume 15 Issue A3
Pg. 119- 125
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Crossref Journal DOI 10.17406/GJSFR

Print ISSN 0975-5896

e-ISSN 2249-4626

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GJSFR-a Classification: FOR Code: 030399p
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v1.2

Issue date

June 30, 2015

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English

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In this paper, an investigation with the application of Monte Carlo simulations to steadystate electron transport and low-field electron mobility characteristics of in bulk ZnO in the wurtzite crystal structure and its alloy Zn 1-x Mg x O with different doping of Mg, x=0.05, 0.1 and 0.2. The Monte Carlo calculations are carried out using a three-valley model for the systems under consideration. The following scattering mechanisms, i.e, impurity, polar optical phonon and acoustic phonon are included in the calculation. The maximum electron drift velocity that is obtained at room temperature for 10 23 m -3 donor concentration is 1.97×10 7 cms -1 for ZnO in threshold field of 400 kV/cm. While the maximum electron drift velocity is 1.62×10 7 cms -1 , 1.03×10 7 cms -1 and 0.43×10 7 cms -1 for Zn 0.95 Mg 0.05 O, Zn 0.9 Mg 0.1 O and Zn 0.8 Mg 0.2 O in threshold field 700 kV/cm respectively. It can be seen the peak drift velocity for bulk ZnO is 1.97×10 7 cms -1 , while for Zn 1_x Mg x O the peak drift velocity decreases due to increasing electron effective mass.

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Electronic Transport Properties in Bulk ZnO and Zn1-xMgxO Using Monte Carlo Simulation

F. Nofeli
F. Nofeli
H. Arabshahi
H. Arabshahi Islamic Azad University, Mashhad, Iran

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