Equivalent Circuit-level Characterization of 1.55 m InGaN Laser
InGaN is one of the most promising group III-V nitride materials recently focused for semiconductor based device fabrication. The advent of long haul optical communication system requires sophisticated and reliable lasing device. InGaN based lasers composited to have 0.8 eV bandgap energy produce coherent light of 1.55 ?m. In this paper, the output characteristics of a heterostructured laser with InGaN as active layer is presented systematically. The circuit-level laser modeling is developed by solving the respective rate equations. This includes the conversion of the complete laser system into its equivalent electrical circuits. Thereafter, simulation was carried out using PSPICE to evaluate the electrical quantities e.g. output power, I-V characteristics, slope efficiency and transient response. A bias voltage of 1.2 volts, threshold current of approximately 6 mA, turn on delay time of 3 ns and slope efficiency of 0.368 W/A are found. The findings are summarized in graphical representation and found to be consistent with numerical simulation of the system model.
