Neural Networks and Rules-based Systems used to Find Rational and Scientific Correlations between being Here and Now with Afterlife Conditions
February 17, 2026
Neural Networks and Rules-based Systems used to Find Rational and
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In GaN is one of the most promising group III-V nitride materials recently focused for semiconductor based device fabrication. The advent of long haul optical communication system requires sophisticated and reliable lasing device. InGaN based lasers composited to have 0.8 eV bandgap energy produce coherent light of 1.55 μm. In this paper, the output characteristics of a heterostructured laser with InGaN as active layer is presented systematically. The circuit-level laser modeling is developed by solving the respective rate equations. This includes the conversion of the complete laser system into its equivalent electrical circuits. Thereafter, simulation was carried out using PSPICE to evaluate the electrical quantities e.g. output power, I-V characteristics, slope efficiency and transient response.
Md. Jahirul Islam. 2017. \u201cEquivalent Circuit-level Characterization of 1.55 m InGaN Laser\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 17 (GJRE Volume 17 Issue F4): .
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
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In GaN is one of the most promising group III-V nitride materials recently focused for semiconductor based device fabrication. The advent of long haul optical communication system requires sophisticated and reliable lasing device. InGaN based lasers composited to have 0.8 eV bandgap energy produce coherent light of 1.55 μm. In this paper, the output characteristics of a heterostructured laser with InGaN as active layer is presented systematically. The circuit-level laser modeling is developed by solving the respective rate equations. This includes the conversion of the complete laser system into its equivalent electrical circuits. Thereafter, simulation was carried out using PSPICE to evaluate the electrical quantities e.g. output power, I-V characteristics, slope efficiency and transient response.
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