Generation and Recombination Processes in Disordered Semiconductor  Structures with Deep Centers

Generation and Recombination Processes in Disordered Semiconductor Structures with Deep Centers

sergey_v._bulyarskiy

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Sergey V. Bulyarskiy

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Russian Academy of Sciences

Generation and Recombination Processes in Disordered Semiconductor Structures with Deep Centers

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Abstract

The article represents the physical processes and mechanisms that accompany the work of the real p-n-junction in disordered semiconductor structures with deep centers. A model for the transfer of electrons and holes in disordered semiconductors has been developed and expressions for the recombination rate have been obtained, which take into account the exchange of charge carriers between neighboring localized regions. The probability of electronic transitions is calculated. It takes into account the electron-phonon interaction and explains the rapid build-up of reverse currents as the applied voltage increases. The new model of recombination in space charge region of p-n-junction has been developed. This model made it possible to develop a new method for processing current-voltage characteristics and determining the parameters of recombination centers in semiconductor devices including electron-phonon interaction parameters.

References

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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

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No ethics committee approval was required for this article type.

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Not applicable for this article.

How to Cite This Article

sergey_v._bulyarskiy. 2020. \u201cGeneration and Recombination Processes in Disordered Semiconductor Structures with Deep Centers\u201d. Global Journal of Science Frontier Research - A: Physics & Space Science GJSFR-A Volume 20 (GJSFR Volume 20 Issue A13).

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GJSFR Volume 20 Issue A13

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Journal Specifications

Crossref Journal DOI 10.17406/GJSFR

Print ISSN 0975-5896

e-ISSN 2249-4626

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GJSFR-A Classification FOR Code: 091306

Submission ReceivedOctober 16, 2020
Peer Review Double Blind
Handling Editor
Accepted November 12, 2020
Published November 22, 2020

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v1.2

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December 14, 2020

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