Investigating the Effect of Defects through Non-Radiative Recombination Centres in a Single Emitter Laser Bar using a Laser Diode Simulation/Emulation Tool

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Christian Kwaku Amuzuvi
Christian Kwaku Amuzuvi
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Philip Blewushie
Philip Blewushie
α University of Mines and Technology University of Mines and Technology

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Investigating the Effect of Defects through Non-Radiative Recombination Centres in a Single Emitter Laser Bar using a Laser Diode Simulation/Emulation Tool

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Abstract

This paper further explores the capability and versatility of Barlase in establishing deeper understanding of an emitter in a laser bar. There is communication between an emitter and the substrate on which it is mounted and this is linked to the degradation process that occurs in lasers. It is well known that various factors come into play in the operation of individual emitters and full laser bars (L-I characteristics, threshold, efficiency, etc.) but one of the most important is the effect of introducing defects through non-radiative recombination centres. Barlase is therefore used to investigate the effect of defects based on the Arrhenius equation, where the quantum well trap generation rate is activated by the local quantum well temperature. The trap generation rate is multiplied by the aging time and the trap density is updated at each aging step. Barlase allows a better understanding of how current competition, temperature and the level of defects affect the output power and the degradation rate of the bar. The significance of this study is to investigate the effect of defects through non-radiative recombination centres in a single emitter laser bar. This was done in order to establish a fair idea of how single emitters will operate in the context of a multi-emitter laser bar through the introduction of non-radiative recombination centres.

References

10 Cites in Article
  1. W Schulz,R Poprawe (2000). Manufacturing with novel high-power diode lasers.
  2. I Gannot,R Waynant (2001). Introduction to the issue on lasers in medicine and biology.
  3. C Amuzuvi,J Attachie (2013). Describing a Laser Diode Emulation Tool Using Single Emitter Simulation Results.
  4. R Xia,E Larkins,I Harrison,S Dods,A Andrianov,J Morgan,J Landesman (2002). Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars.
  5. J Tomm,A Gerhardt,T Elsaesser,D Lorenzen,P Hennig (2002). Simultaneous quantification of strain and defects in high-power diode laser devices.
  6. S Bull,J Tomm,M Oudart,J Nagle,C Scholz,K Boucke,I Harrison,E Larkins (2005). By-emitter degradation analysis of high-power laser bars.
  7. J Lim,T Benson,E Larkins (2005). Design of wide-emitter single-mode laser diodes.
  8. P Bream,J Lim,S Bull,A Andrianov,S Sujecki,E Larkins (2006). The impact of nonequilibrium gain in a spectral laser diode model.
  9. C Amuzuvi (2013). Emulation and By-Emitter Degradation Analysis of High Power Lasers: Lap Lambert.
  10. Govind Agrawal,Niloy Dutta (1993). Quantum-Well Semiconductor Lasers.

Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Christian Kwaku Amuzuvi. 2013. \u201cInvestigating the Effect of Defects through Non-Radiative Recombination Centres in a Single Emitter Laser Bar using a Laser Diode Simulation/Emulation Tool\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 13 (GJRE Volume 13 Issue F14): .

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Issue Cover
GJRE Volume 13 Issue F14
Pg. 15- 18
Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Version of record

v1.2

Issue date

November 30, 2013

Language
en
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This paper further explores the capability and versatility of Barlase in establishing deeper understanding of an emitter in a laser bar. There is communication between an emitter and the substrate on which it is mounted and this is linked to the degradation process that occurs in lasers. It is well known that various factors come into play in the operation of individual emitters and full laser bars (L-I characteristics, threshold, efficiency, etc.) but one of the most important is the effect of introducing defects through non-radiative recombination centres. Barlase is therefore used to investigate the effect of defects based on the Arrhenius equation, where the quantum well trap generation rate is activated by the local quantum well temperature. The trap generation rate is multiplied by the aging time and the trap density is updated at each aging step. Barlase allows a better understanding of how current competition, temperature and the level of defects affect the output power and the degradation rate of the bar. The significance of this study is to investigate the effect of defects through non-radiative recombination centres in a single emitter laser bar. This was done in order to establish a fair idea of how single emitters will operate in the context of a multi-emitter laser bar through the introduction of non-radiative recombination centres.

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Investigating the Effect of Defects through Non-Radiative Recombination Centres in a Single Emitter Laser Bar using a Laser Diode Simulation/Emulation Tool

Christian Kwaku Amuzuvi
Christian Kwaku Amuzuvi University of Mines and Technology
Philip Blewushie
Philip Blewushie

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