Investigating the Effect of Defects through Non-Radiative Recombination Centres in a Single Emitter Laser Bar using a Laser Diode Simulation/Emulation Tool

Christian Kwaku Amuzuvi; Philip Blewushie

Investigating the Effect of Defects through Non-Radiative Recombination Centres in a Single Emitter Laser Bar using a Laser Diode Simulation/Emulation Tool

Christian Kwaku Amuzuvi * §

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Philip Blewushie

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University of Mines and Technology

Investigating the Effect of Defects through Non-Radiative Recombination Centres in a Single Emitter Laser Bar using a Laser Diode Simulation/Emulation Tool

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Abstract

This paper further explores the capability and versatility of Barlase in establishing deeper understanding of an emitter in a laser bar. There is communication between an emitter and the substrate on which it is mounted and this is linked to the degradation process that occurs in lasers. It is well known that various factors come into play in the operation of individual emitters and full laser bars (L-I characteristics, threshold, efficiency, etc.) but one of the most important is the effect of introducing defects through non-radiative recombination centres. Barlase is therefore used to investigate the effect of defects based on the Arrhenius equation, where the quantum well trap generation rate is activated by the local quantum well temperature. The trap generation rate is multiplied by the aging time and the trap density is updated at each aging step. Barlase allows a better understanding of how current competition, temperature and the level of defects affect the output power and the degradation rate of the bar. The significance of this study is to investigate the effect of defects through non-radiative recombination centres in a single emitter laser bar. This was done in order to establish a fair idea of how single emitters will operate in the context of a multi-emitter laser bar through the introduction of non-radiative recombination centres.

References

10 Cites in Article

Reference Format

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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Christian Amuzuvi, Christian Amuzuvi, Philip Blewushie. 2013. "Investigating the Effect of Defects through Non-Radiative Recombination Centres in a Single Emitter Laser Bar using a Laser Diode Simulation/Emulation Tool". Global Journal of Research in Engineering, Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 13 (GJRE Volume 13 Issue F14).

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GJRE Volume 13 Issue F14

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Keywords

band gap energy by-emitter defect Degradation emitter non-radiative recombination quantum well slope efficiency temperature threshold current

Classification

GJRE-F Classification FOR Code: 020502

Submission ReceivedDecember 16, 2012
Peer Review Double Blind
Handling Editor
Accepted December 31, 2012
Published January 15, 2013

Version of record

v1.2

Issue date

November 30, 2013

Language

English

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Article Matrices

Total Score: 102

Country: Ghana

Subject: Global Journal of Research in Engineering

Authors: Christian Kwaku Amuzuvi, Philip Blewushie (PhD/Dr. count: 0)

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