Neural Networks and Rules-based Systems used to Find Rational and Scientific Correlations between being Here and Now with Afterlife Conditions
Neural Networks and Rules-based Systems used to Find Rational and
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The performance of chip is degraded because of the short-channel effect (SCE) as the metal oxide semiconductor field effect transistor (MOSFET) size scales down. Silicon on insulator (SOI) technology helps to reduce the short channel effects and permits a good solution to the miniaturization. The electrical characteristics of fully depleted SOI (FDSOI) and partially depleted SOI (PDSOI) n-channel MOSFET (N-MOSFET) are investigated as silicon film thickness is varied in this paper. Both transistors are compared in terms of electrical parameters which are the threshold voltage, subthreshold slope, on-state current, leakage current and drain induced barrier lowering (DIBL). Silvaco TCAD tools are used for simulating both PDSOI and FDSOI MOSFETs. FDSOI MOSFET is superior to PDSOI MOSFET based on found simulation results.
Towhid Adnan Chowdhury. 2026. \u201cInvestigation the Impact of Silicon Film Thickness on FDSOI and PDSOI MOSFET Characteristics\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 23 (GJRE Volume 23 Issue F2): .
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
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Total Score: 101
Country: Bangladesh
Subject: Global Journal of Research in Engineering - F: Electrical & Electronic
Authors: Towhid Adnan Chowdhury (PhD/Dr. count: 0)
View Count (all-time): 207
Total Views (Real + Logic): 1142
Total Downloads (simulated): 23
Publish Date: 2026 01, Fri
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The performance of chip is degraded because of the short-channel effect (SCE) as the metal oxide semiconductor field effect transistor (MOSFET) size scales down. Silicon on insulator (SOI) technology helps to reduce the short channel effects and permits a good solution to the miniaturization. The electrical characteristics of fully depleted SOI (FDSOI) and partially depleted SOI (PDSOI) n-channel MOSFET (N-MOSFET) are investigated as silicon film thickness is varied in this paper. Both transistors are compared in terms of electrical parameters which are the threshold voltage, subthreshold slope, on-state current, leakage current and drain induced barrier lowering (DIBL). Silvaco TCAD tools are used for simulating both PDSOI and FDSOI MOSFETs. FDSOI MOSFET is superior to PDSOI MOSFET based on found simulation results.
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