Investigation the Impact of Silicon Film Thickness on FDSOI and PDSOI MOSFET Characteristics

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Towhid Adnan Chowdhury
Towhid Adnan Chowdhury

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The performance of chip is degraded because of the short-channel effect (SCE) as the metal oxide semiconductor field effect transistor (MOSFET) size scales down. Silicon on insulator (SOI) technology helps to reduce the short channel effects and permits a good solution to the miniaturization. The electrical characteristics of fully depleted SOI (FDSOI) and partially depleted SOI (PDSOI) n-channel MOSFET (N-MOSFET) are investigated as silicon film thickness is varied in this paper. Both transistors are compared in terms of electrical parameters which are the threshold voltage, subthreshold slope, on-state current, leakage current and drain induced barrier lowering (DIBL). Silvaco TCAD tools are used for simulating both PDSOI and FDSOI MOSFETs. FDSOI MOSFET is superior to PDSOI MOSFET based on found simulation results.

Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

Towhid Adnan Chowdhury. 2026. \u201cInvestigation the Impact of Silicon Film Thickness on FDSOI and PDSOI MOSFET Characteristics\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 23 (GJRE Volume 23 Issue F2): .

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Silicon film thickness analysis for MOSFET devices in engineering research.
Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

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GJRE-F Classification: LCC Code: TK7874
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v1.2

Issue date

August 12, 2023

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English

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The performance of chip is degraded because of the short-channel effect (SCE) as the metal oxide semiconductor field effect transistor (MOSFET) size scales down. Silicon on insulator (SOI) technology helps to reduce the short channel effects and permits a good solution to the miniaturization. The electrical characteristics of fully depleted SOI (FDSOI) and partially depleted SOI (PDSOI) n-channel MOSFET (N-MOSFET) are investigated as silicon film thickness is varied in this paper. Both transistors are compared in terms of electrical parameters which are the threshold voltage, subthreshold slope, on-state current, leakage current and drain induced barrier lowering (DIBL). Silvaco TCAD tools are used for simulating both PDSOI and FDSOI MOSFETs. FDSOI MOSFET is superior to PDSOI MOSFET based on found simulation results.

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Investigation the Impact of Silicon Film Thickness on FDSOI and PDSOI MOSFET Characteristics

Towhid Adnan Chowdhury
Towhid Adnan Chowdhury

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