Management Photoluminescence and Electrical Properties of the Double-Barrier Structure Based on Silicon Gamma – Rays and Radiation Defect

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Abasov Fakhraddin Pasha
Abasov Fakhraddin Pasha
1 Institute of Radiation Problems Azerbaijan National Akademy Science

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Developed and analyzed two-barrier structures -silicon-based photo detectors with high sensitivity in the field of integrated short-range. Developed silicon-based photo detector with high sensitivity integrated in the short range. The effect of gamma radiation on the mechanism of current transport in the structure type Schottky barrier, and in the p-n junctions. It is shown that the double-barrier structure can improve the photovoltaic parameters of conventional detectors. We studied the effect of gamma radiation on the origin of the current mechanism in the structure as a whole, and in the Schottky barrier in the p -n -transitions separately. Also studied the effect of radiation on the photoelectric and photoluminescence parameters of the two barrier structure. Shown that two barrier structures can improve the photoelectric parameters of conventional detectors.

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No external funding was declared for this work.

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The authors declare no conflict of interest.

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No ethics committee approval was required for this article type.

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Not applicable for this article.

Abasov Fakhraddin Pasha. 2017. \u201cManagement Photoluminescence and Electrical Properties of the Double-Barrier Structure Based on Silicon Gamma – Rays and Radiation Defect\u201d. Global Journal of Science Frontier Research - A: Physics & Space Science GJSFR-A Volume 16 (GJSFR Volume 16 Issue A6): .

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GJSFR Volume 16 Issue A6
Pg. 85- 88
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Crossref Journal DOI 10.17406/GJSFR

Print ISSN 0975-5896

e-ISSN 2249-4626

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GJSFR-A Classification: FOR Code: 020399p
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v1.2

Issue date

January 30, 2017

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English

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Developed and analyzed two-barrier structures -silicon-based photo detectors with high sensitivity in the field of integrated short-range. Developed silicon-based photo detector with high sensitivity integrated in the short range. The effect of gamma radiation on the mechanism of current transport in the structure type Schottky barrier, and in the p-n junctions. It is shown that the double-barrier structure can improve the photovoltaic parameters of conventional detectors. We studied the effect of gamma radiation on the origin of the current mechanism in the structure as a whole, and in the Schottky barrier in the p -n -transitions separately. Also studied the effect of radiation on the photoelectric and photoluminescence parameters of the two barrier structure. Shown that two barrier structures can improve the photoelectric parameters of conventional detectors.

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Management Photoluminescence and Electrical Properties of the Double-Barrier Structure Based on Silicon Gamma – Rays and Radiation Defect

Abasov Fakhraddin Pasha
Abasov Fakhraddin Pasha Institute of Radiation Problems Azerbaijan National Akademy Science

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