Management Photoluminescence and Electrical Properties of the Double-Barrier Structure Based on Silicon Gamma - Rays and Radiation Defect

Abasov Fakhraddin Pasha

Management Photoluminescence and Electrical Properties of the Double-Barrier Structure Based on Silicon Gamma – Rays and Radiation Defect

Abasov Fakhraddin Pasha * §

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§ Institute of Radiation Problems Azerbaijan National ...

Management Photoluminescence and Electrical Properties of the Double-Barrier Structure Based on Silicon Gamma – Rays and Radiation Defect

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Abstract

Developed and analyzed two-barrier structures -silicon-based photo detectors with high sensitivity in the field of integrated short-range. Developed silicon-based photo detector with high sensitivity integrated in the short range. The effect of gamma radiation on the mechanism of current transport in the structure type Schottky barrier, and in the p-n junctions. It is shown that the double-barrier structure can improve the photovoltaic parameters of conventional detectors. We studied the effect of gamma radiation on the origin of the current mechanism in the structure as a whole, and in the Schottky barrier in the p -n -transitions separately. Also studied the effect of radiation on the photoelectric and photoluminescence parameters of the two barrier structure. Shown that two barrier structures can improve the photoelectric parameters of conventional detectors.

Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Abasov Fakhraddin Pasha. 2017. "Management Photoluminescence and Electrical Properties of the Double-Barrier Structure Based on Silicon Gamma – Rays and Radiation Defect". Global Journal of Science Frontier Research - A: Physics & Space Science GJSFR-A Volume 16 (GJSFR Volume 16 Issue A6).

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GJSFR Volume 16 Issue A6

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Journal Specifications

Crossref Journal DOI 10.17406/GJSFR

Print ISSN 0975-5896

e-ISSN 2249-4626

Keywords

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Classification

GJSFR-A Classification FOR Code: 020399p

Submission ReceivedNovember 28, 2016
Peer Review Double Blind
Handling Editor
Accepted December 22, 2016
Published January 2, 2017

Version of record

v1.2

Issue date

January 30, 2017

Language

English

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Article Matrices

Total Score: 101

Country: Azerbaijan

Subject: Global Journal of Science Frontier Research - A: Physics & Space Science

Authors: Abasov Fakhraddin Pasha (PhD/Dr. count: 0)

View Count (all-time): 408

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Total Downloads (simulated): 119

Publish Date: 2017 01, Mon

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Total Views: 1.4K

Total Downloads: 119

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