Performance Analysis of Enhanced Carbon Nanotube Field Effect Transistor (CNTFET) using Zirconia as Gate Dielectric
The Carbon Nanotube Field Effect Transistor (CNTFET) is one of the most rising devices among the emerging technologies to extend and/or complement the traditional Silicon MOSFET as it is showing high efficiency and wide range of applications in many different fields of science and technology. Carbon Nanotube Field Effect Transistors have been explored and proposed to be the upcoming more efficient and suitable candidates for the integrated circuit (NGIC) devices of next generation. In this study, firstly, the Density of State (DOS) with different types of nanotubes considering the chirality have been reviewed. Then we have studied the carbon nanotube field effect transistor by replacing the traditional gate insulator with a material that has much higher dielectric constant. Carbon Nanotube Field Effect Transistor has been analyzed with the bandgap of 1.0882eV in this research and ZrO2 (Zirconia) has been taken as the gate dielectric. We have also analyzed quantum capacitance, transconductance and mobile charge behavior at different drain voltage. Finally, the output characteristics of proposed model has been given.
