Performance Analysis of Enhanced Carbon Nanotube Field Effect Transistor (CNTFET) using Zirconia as Gate Dielectric

α
Faisal Al Mozahid
Faisal Al Mozahid B.Sc. in Electrical and Electronic Engineering, M.Sc. in Electronics Engineering, M.Sc. in Glass and Ceramics Engineering
σ
Dr. M Tanseer Ali
Dr. M Tanseer Ali
ρ
Md. Ashikur Rahman
Md. Ashikur Rahman
α American International University-Bangladesh

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Performance Analysis of Enhanced Carbon Nanotube Field Effect Transistor (CNTFET) using Zirconia as Gate Dielectric

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Performance Analysis of Enhanced Carbon Nanotube Field Effect Transistor (CNTFET) using Zirconia as Gate Dielectric Banner

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Abstract

The Carbon Nanotube Field Effect Transistor (CNTFET) is one of the most rising devices among the emerging technologies to extend and/or complement the traditional Silicon MOSFET as it is showing high efficiency and wide range of applications in many different fields of science and technology. Carbon Nanotube Field Effect Transistors have been explored and proposed to be the upcoming more efficient and suitable candidates for the integrated circuit (NGIC) devices of next generation. In this study, firstly, the Density of State (DOS) with different types of nanotubes considering the chirality have been reviewed. Then we have studied the carbon nanotube field effect transistor by replacing the traditional gate insulator with a material that has much higher dielectric constant.

References

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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Faisal Al Mozahid. 2017. \u201cPerformance Analysis of Enhanced Carbon Nanotube Field Effect Transistor (CNTFET) using Zirconia as Gate Dielectric\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 17 (GJRE Volume 17 Issue F2): .

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Keywords
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GJRE-F Classification: FOR Code: 090699
Version of record

v1.2

Issue date

June 9, 2017

Language
en
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The Carbon Nanotube Field Effect Transistor (CNTFET) is one of the most rising devices among the emerging technologies to extend and/or complement the traditional Silicon MOSFET as it is showing high efficiency and wide range of applications in many different fields of science and technology. Carbon Nanotube Field Effect Transistors have been explored and proposed to be the upcoming more efficient and suitable candidates for the integrated circuit (NGIC) devices of next generation. In this study, firstly, the Density of State (DOS) with different types of nanotubes considering the chirality have been reviewed. Then we have studied the carbon nanotube field effect transistor by replacing the traditional gate insulator with a material that has much higher dielectric constant.

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Performance Analysis of Enhanced Carbon Nanotube Field Effect Transistor (CNTFET) using Zirconia as Gate Dielectric

Faisal Al Mozahid
Faisal Al Mozahid American International University-Bangladesh
Dr. M Tanseer Ali
Dr. M Tanseer Ali
Md. Ashikur Rahman
Md. Ashikur Rahman

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