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09588
The Carbon Nanotube Field Effect Transistor (CNTFET) is one of the most rising devices among the emerging technologies to extend and/or complement the traditional Silicon MOSFET as it is showing high efficiency and wide range of applications in many different fields of science and technology. Carbon Nanotube Field Effect Transistors have been explored and proposed to be the upcoming more efficient and suitable candidates for the integrated circuit (NGIC) devices of next generation. In this study, firstly, the Density of State (DOS) with different types of nanotubes considering the chirality have been reviewed. Then we have studied the carbon nanotube field effect transistor by replacing the traditional gate insulator with a material that has much higher dielectric constant.
Faisal Al Mozahid. 2017. \u201cPerformance Analysis of Enhanced Carbon Nanotube Field Effect Transistor (CNTFET) using Zirconia as Gate Dielectric\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 17 (GJRE Volume 17 Issue F2): .
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
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Total Score: 108
Country: Unknown
Subject: Global Journal of Research in Engineering - F: Electrical & Electronic
Authors: Faisal Al Mozahid, Dr. M Tanseer Ali, Md. Ashikur Rahman (PhD/Dr. count: 1)
View Count (all-time): 190
Total Views (Real + Logic): 3462
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Publish Date: 2017 06, Fri
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The Carbon Nanotube Field Effect Transistor (CNTFET) is one of the most rising devices among the emerging technologies to extend and/or complement the traditional Silicon MOSFET as it is showing high efficiency and wide range of applications in many different fields of science and technology. Carbon Nanotube Field Effect Transistors have been explored and proposed to be the upcoming more efficient and suitable candidates for the integrated circuit (NGIC) devices of next generation. In this study, firstly, the Density of State (DOS) with different types of nanotubes considering the chirality have been reviewed. Then we have studied the carbon nanotube field effect transistor by replacing the traditional gate insulator with a material that has much higher dielectric constant.
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