Neural Networks and Rules-based Systems used to Find Rational and Scientific Correlations between being Here and Now with Afterlife Conditions
Neural Networks and Rules-based Systems used to Find Rational and
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Now-a-days quantum dot intermediate band solar cell (QD IBSC) is the most promising approach for increasing the efficiency of the solar cell. In this paper InxGa1-xN &GaAs based p-i-n reference cell and quantum dot intermediate band solar cell where AlxGa1-xAs is used in window layer have been studied for high efficiency and evaluated the performance with various parameters. Here quantum dots of InAs&InN are placed in the i-layer of p-i-n reference cell. V-I characteristics of p-i-n reference cell using GaAs, AlxGa1-xAs is observed & maximum efficiency & the short circuit current density is found 32.87% & 350 A/m2 respectively. Also an increased efficiency of 41.45% & short circuit current density of about 466.07 A/m2 is to be found for same structure using InxGa1-xN material. Maximum efficiency & short circuit current is to be found 58.77% & 649 A/m2 respectively for InxGa1-xN based QD IBSC and 51.59% & 543.36 A/m2 for GaAs based QD IBSC respectively. Comparing all the results we have found that InxGa1-xN based Quantum dot intermediate band solar cell offers the better efficiency.
Nezam Uddin. 2015. \u201cPerformance Analysis of Quantum Dot Intermediate Band Solar Cell (QD IBSC)\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 15 (GJRE Volume 15 Issue F1): .
Crossref Journal DOI 10.17406/gjre
Print ISSN 0975-5861
e-ISSN 2249-4596
The methods for personal identification and authentication are no exception.
Total Score: 104
Country: Bangladesh
Subject: Global Journal of Research in Engineering - F: Electrical & Electronic
Authors: Nezam Uddin, Md.Motiur Rahman, Tanvir Ahmed, Atiqul Islam (PhD/Dr. count: 0)
View Count (all-time): 202
Total Views (Real + Logic): 4364
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Publish Date: 2015 02, Sat
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Now-a-days quantum dot intermediate band solar cell (QD IBSC) is the most promising approach for increasing the efficiency of the solar cell. In this paper InxGa1-xN &GaAs based p-i-n reference cell and quantum dot intermediate band solar cell where AlxGa1-xAs is used in window layer have been studied for high efficiency and evaluated the performance with various parameters. Here quantum dots of InAs&InN are placed in the i-layer of p-i-n reference cell. V-I characteristics of p-i-n reference cell using GaAs, AlxGa1-xAs is observed & maximum efficiency & the short circuit current density is found 32.87% & 350 A/m2 respectively. Also an increased efficiency of 41.45% & short circuit current density of about 466.07 A/m2 is to be found for same structure using InxGa1-xN material. Maximum efficiency & short circuit current is to be found 58.77% & 649 A/m2 respectively for InxGa1-xN based QD IBSC and 51.59% & 543.36 A/m2 for GaAs based QD IBSC respectively. Comparing all the results we have found that InxGa1-xN based Quantum dot intermediate band solar cell offers the better efficiency.
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