Performance Analysis of Quantum Dot Intermediate Band Solar Cell (QD IBSC)

1
Nezam Uddin
Nezam Uddin
2
Md.Motiur Rahman
Md.Motiur Rahman
3
Tanvir Ahmed
Tanvir Ahmed
4
Atiqul Islam
Atiqul Islam
1 Khulna University of Engineering and Technology

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Now-a-days quantum dot intermediate band solar cell (QD IBSC) is the most promising approach for increasing the efficiency of the solar cell. In this paper InxGa1-xN &GaAs based p-i-n reference cell and quantum dot intermediate band solar cell where AlxGa1-xAs is used in window layer have been studied for high efficiency and evaluated the performance with various parameters. Here quantum dots of InAs&InN are placed in the i-layer of p-i-n reference cell. V-I characteristics of p-i-n reference cell using GaAs, AlxGa1-xAs is observed & maximum efficiency & the short circuit current density is found 32.87% & 350 A/m2 respectively. Also an increased efficiency of 41.45% & short circuit current density of about 466.07 A/m2 is to be found for same structure using InxGa1-xN material. Maximum efficiency & short circuit current is to be found 58.77% & 649 A/m2 respectively for InxGa1-xN based QD IBSC and 51.59% & 543.36 A/m2 for GaAs based QD IBSC respectively. Comparing all the results we have found that InxGa1-xN based Quantum dot intermediate band solar cell offers the better efficiency.

Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

Nezam Uddin. 2015. \u201cPerformance Analysis of Quantum Dot Intermediate Band Solar Cell (QD IBSC)\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 15 (GJRE Volume 15 Issue F1): .

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Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

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GJRE-F Classification: FOR Code: 090699
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v1.2

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February 14, 2015

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English

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Now-a-days quantum dot intermediate band solar cell (QD IBSC) is the most promising approach for increasing the efficiency of the solar cell. In this paper InxGa1-xN &GaAs based p-i-n reference cell and quantum dot intermediate band solar cell where AlxGa1-xAs is used in window layer have been studied for high efficiency and evaluated the performance with various parameters. Here quantum dots of InAs&InN are placed in the i-layer of p-i-n reference cell. V-I characteristics of p-i-n reference cell using GaAs, AlxGa1-xAs is observed & maximum efficiency & the short circuit current density is found 32.87% & 350 A/m2 respectively. Also an increased efficiency of 41.45% & short circuit current density of about 466.07 A/m2 is to be found for same structure using InxGa1-xN material. Maximum efficiency & short circuit current is to be found 58.77% & 649 A/m2 respectively for InxGa1-xN based QD IBSC and 51.59% & 543.36 A/m2 for GaAs based QD IBSC respectively. Comparing all the results we have found that InxGa1-xN based Quantum dot intermediate band solar cell offers the better efficiency.

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Performance Analysis of Quantum Dot Intermediate Band Solar Cell (QD IBSC)

Nezam Uddin
Nezam Uddin Khulna University of Engineering and Technology
Md.Motiur Rahman
Md.Motiur Rahman
Tanvir Ahmed
Tanvir Ahmed
Atiqul Islam
Atiqul Islam

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