Robustness Evaluation Study of Power RF LDMOS Devices After Thermal Life Tests

Robustness Evaluation Study of Power RF LDMOS Devices After Thermal Life Tests

M.A. Belaid

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A.M. Nahhas

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M. Masmoudi

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3 LATIS-ENISo, 4023 Sousse University, Tunisia

GJRE Volume 17 Issue F6

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The objective of our study was to evaluate, in a population of Togolese People Living With HIV(PLWHIV), the agreement between three scores derived from the general population namely the Framingham score, the Systematic Coronary Risk Evaluation (SCORE), the evaluation of the cardiovascular risk (CVR) according to the World Health Organization.

This paper presents a synthesis of robustness evaluation on power RF LDMOS devices and its relation with electrical and physical behaviours after RF life-tests. It is important to understand the physical degradation mechanism effects and the liaison on drifts of critical electrical parameters after life ageing tests, in I-V such as threshold voltage (Vth), the feedback capacitance (Crss) in C-V and the S-parameter (S21) in RF. It shows with tracking of set parameters that Hot Carrier Injection (HCI) phenomenon appears. It is the main cause for device degradation leading to the interface state generation (traps), which results in a build up of negative charge at Si/SiO2 interface. More interface states are created due to a located maximum impact ionization rate at the gate edge. Such simulations correctly take into account interactions coupled between electrical, thermal and RF behaviours in device inside using the FEM method. A numerical model (Silvaco-Atlas) was used to confirm degradation phenomena. The problem of hot-electron should be taken into consideration in the design of the power RF MOS devices and can be a useful tool to investigate reliability in MOSFET.

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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

M. Masmoudi. 2017. \u201cRobustness Evaluation Study of Power RF LDMOS Devices After Thermal Life Tests\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 17 (GJRE Volume 17 Issue F6): .

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GJRE Volume 17 Issue F6
Pg. 41- 48

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Keywords

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Classification

GJRE-F Classification: FOR Code: 090699

Submission ReceivedDecember 6, 2016
RevisedDecember 6, 2016
Peer Review Double Blind
Handling Editor
Accepted January 2, 2017
Published January 15, 2017

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v1.2

Issue date

October 13, 2017

Language

English

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Total Score: 103

Country: Tunisia

Subject: Global Journal of Research in Engineering - F: Electrical & Electronic

Authors: M.A. Belaid , A.M. Nahhas, M. Masmoudi (PhD/Dr. count: 0)

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