Simulation based Characterization of the Transport Channel Parameters of Pentacene Thin Film Transistor: Effect of Gate Insulator Thickness and Gate Electrode Work Functio

Simulation based Characterization of the Transport Channel Parameters of Pentacene Thin Film Transistor: Effect of Gate Insulator Thickness and Gate Electrode Work Functio

W. Wondmagegn

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R. J. Pieper

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α Frostburg State University

Simulation based Characterization of the Transport Channel Parameters of Pentacene Thin Film Transistor: Effect of Gate Insulator Thickness and Gate Electrode Work Functio

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Abstract

In this paper we have presented the simulation and analysis of the channel field, potential, mobility, hole concentration, and the threshold voltage of pentacene thin film transistor with gate metal work function and gate insulator thickness. The top contact transistor from pentacene active material, paryelene dielectric and gold source/drain electrodes, has been used for our simulation. The simulations have been performed using Silvaco’s Atlas device simulator. The Poole-Frenkel transport model was used in the pentacene active material. The results of the simulation have shown an impact of the gate metal work function on threshold voltage, channel potential, channel charge concentration, channel field, and mobility of the device.

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33 Cites in Article

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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

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How to Cite This Article

W. Wondmagegn. 2017. \u201cSimulation based Characterization of the Transport Channel Parameters of Pentacene Thin Film Transistor: Effect of Gate Insulator Thickness and Gate Electrode Work Functio\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 16 (GJRE Volume 16 Issue F8): .

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GJRE Volume 16 Issue F8
Pg. 1- 8

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

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GJRE-F Classification: FOR Code: 091599, 090699

Submission ReceivedDecember 10, 2015
Peer Review Double Blind
Handling Editor
Accepted January 4, 2016
Published January 15, 2016

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v1.2

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February 5, 2017

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Total Score: 132

Country: United States

Subject: Global Journal of Research in Engineering - F: Electrical & Electronic

Authors: W. Wondmagegn, R. J. Pieper , (PhD/Dr. count: 0)

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Publish Date: 2017 02, Sun

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