Simulation based Characterization of the Transport Channel Parameters of Pentacene Thin Film Transistor: Effect of Gate Insulator Thickness and Gate Electrode Work Functio

§ Frostburg State University

Send Message

To: Author

Simulation based Characterization of the Transport Channel Parameters of Pentacene Thin Film Transistor: Effect of Gate Insulator Thickness and Gate Electrode Work Functio

Article Fingerprint

ReserarchID

MI8BR

Simulation based Characterization of the Transport Channel Parameters of Pentacene Thin Film Transistor: Effect of Gate Insulator Thickness and Gate Electrode Work Functio Banner

Key Research Insights

Synthesized scholarly intelligence & interactive research assistant
  • English
  • Afrikaans
  • Albanian
  • Amharic
  • Arabic
  • Armenian
  • Azerbaijani
  • Basque
  • Belarusian
  • Bengali
  • Bosnian
  • Bulgarian
  • Catalan
  • Cebuano
  • Chichewa
  • Chinese (Simplified)
  • Chinese (Traditional)
  • Corsican
  • Croatian
  • Czech
  • Danish
  • Dutch
  • Esperanto
  • Estonian
  • Filipino
  • Finnish
  • French
  • Frisian
  • Galician
  • Georgian
  • German
  • Greek
  • Gujarati
  • Haitian Creole
  • Hausa
  • Hawaiian
  • Hebrew
  • Hindi
  • Hmong
  • Hungarian
  • Icelandic
  • Igbo
  • Indonesian
  • Irish
  • Italian
  • Japanese
  • Javanese
  • Kannada
  • Kazakh
  • Khmer
  • Korean
  • Kurdish (Kurmanji)
  • Kyrgyz
  • Lao
  • Latin
  • Latvian
  • Lithuanian
  • Luxembourgish
  • Macedonian
  • Malagasy
  • Malay
  • Malayalam
  • Maltese
  • Maori
  • Marathi
  • Mongolian
  • Myanmar (Burmese)
  • Nepali
  • Norwegian
  • Pashto
  • Persian
  • Polish
  • Portuguese
  • Punjabi
  • Romanian
  • Russian
  • Samoan
  • Scots Gaelic
  • Serbian
  • Sesotho
  • Shona
  • Sindhi
  • Sinhala
  • Slovak
  • Slovenian
  • Somali
  • Spanish
  • Sundanese
  • Swahili
  • Swedish
  • Tajik
  • Tamil
  • Telugu
  • Thai
  • Turkish
  • Ukrainian
  • Urdu
  • Uzbek
  • Vietnamese
  • Welsh
  • Xhosa
  • Yiddish
  • Yoruba
  • Zulu
Reading Preferences
Font Size
Line Spacing
Background
This converted HTML version may contain rendering inconsistencies. Please refer to the PDF for the authoritative version, or click here to provide feedback.

Abstract

In this paper we have presented the simulation and analysis of the channel field, potential, mobility, hole concentration, and the threshold voltage of pentacene thin film transistor with gate metal work function and gate insulator thickness. The top contact transistor from pentacene active material, paryelene dielectric and gold source/drain electrodes, has been used for our simulation. The simulations have been performed using Silvaco’s Atlas device simulator. The Poole-Frenkel transport model was used in the pentacene active material. The results of the simulation have shown an impact of the gate metal work function on threshold voltage, channel potential, channel charge concentration, channel field, and mobility of the device.

References

33 Cites in Article
  1. 1. C Dimitrakopoulos,D Mascaro (2001). Organic thin-film transistors: A review of recent advances. IBM J. RES & DEV, 45, 11.
  2. 2. H Kim,S Kang,D Park,K Chung,M Noh,C Whang,M Cho (2004). Characterization of a Pentacene Thin-Film Transistor with a HfO2/Al2O3 Gate Insulator. Journal of the Korean Physical Society, 45, 935.
  3. 3. B Peng,X Ren,Z Wang,X Wang,R Roberts,P Chan (2014). High performance organic transistor active-matrix driver developed on paper substrate. High performance organic transistor active-matrix driver developed on paper substrate
  4. 4. Chuan Han,Wing Tang,Cheung Leung,Chi Che,Peter Lai (2013). High-Performance Pentacene Thin-Film Transistor With High-$\kappa$ HfLaON as Gate Dielectric. IEEE Electron Device Letters, 34(11), 1397-1399.
  5. 5. H.-W Zan,W.-W Tsai,Y Lo,Y.-M Wu,Y.-S Yang (2012). Pentacene-Based Organic Thin Film Transistors for Ammonia Sensing. IEEE Sensors Journal, 12(3)
  6. 6. D Knipp,T Muck,A Benor,V Wagner (2006). Environmental stability and electronic transport of pentacene thin film transistors. Journal of Non-Crystalline Solids, 352, 1774.
  7. 7. Choongik Kim,Antonio Facchetti,Tobin Marks (2007). Polymer Gate Dielectric Surface Viscoelasticity Modulates Pentacene Transistor Performance. Science, 318(5847), 76-80.
  8. 8. Chang Kim,Sung Jo,Jong Kim,Seung Ryu,Joo Noh,Hong Baik,Se Lee,Kie Song (2007). High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate. Semiconductor Science and Technology, 22(7), 691-694.
  9. 9. H Klauk,M Halik,U Zschieschang,G Schmid,W Radlik,W Weber (2002). High-mobility polymer gate dielectric pentacene thin film transistors. J. Appl. Phys, 92, 5259.
  10. 10. C Kagan,P Andry (2003). Thin-Film Transistors. Thin-Film Transistors, 334.
  11. 11. Myung-Hoon Lim,In-Yeal Lee,Seong-Guk Jeong,Jongtaek Lee,Woo-Shik Jung,Hyun-Yong Yu,Gil-Ho Kim,Yonghan Roh,Jin-Hong Park (2012). Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes. Organic Electronics, 13(6), 1056-1059.
  12. 12. A Gaikwad,Y Khan,A Ostfeld,S Pandya,S Abraham,A Arias (2016). Identifying orthogonal solvents for solution processed organic transistors. Organic Electronics, 30, 18-29.
  13. 13. A Salleo,R Street (2003). Light-induced bias stress reversal in polyfluorene thin-film transistors. Journal of Applied Physics, 94(1), 471-479.
  14. 14. R Street,A Salleo,M Chabinyc (2003). Bipolaron mechanism for bias-stress effects in polymer transistors. Physical Review B, 68(8), 85316.
  15. 15. D Knipp,R Street,A Volkel,J Ho (2003). Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport. Journal of Applied Physics, 93, 347.
  16. 16. K Pernstich,S Haas,D Oberhoff,C Goldmann,D Gundlach,B Batlogg,A Rashid,G Schitter (2004). Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator. Journal of Applied Physics, 96(11), 6431-6438.
  17. 17. P Bergveld,J Hendrikse,W Olthuis (1998). Theory and application of the material work function for chemical sensors, based on the field effect principle. Meas. Sci. Technol, 9, 1801.
  18. 18. T Ouisse (1994). Self-consistent quantum-mechanical calculations in ultrathin silicon-on-insulator structures. Journal of Applied Physics, 76(10), 5989-5995.
  19. 19. S Gowrisanker,M Quevedo-Lopez,H Alshareef,B Gnade,S Venugopal,R Krishna,K Kaftanoglu,D Allee (2009). A novel low temperature integration of hybrid CMOS devices on flexible substrates. Organic Electronics, 10(7), 1217-1222.
  20. 20. S Gowrisanker,Y Ai,H Jia,M Quevedo-Lopez,H Alshareef,I Trachtenberg,H Stiegler,H Edwards,R Barnett,B Gnade (2009). Unknown Title. Electrochemical and Solid-State Letters, 12(3), 50-H53.
  21. 21. W Wondmagegn,N Satyala,R Pieper,M Quevedo-Lopez,S Gowrisanker,H Alshareef,H Stiegler,B Gnade (2011). Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors. Journal of Computational Electronics, 10(1-2), 144-153.
  22. 22. Takeo Minari,Takashi Nemoto,Seiji Isoda (2006). Temperature and electric-field dependence of the mobility of a single-grain pentacene field-effect transistor. Journal of Applied Physics, 99(3), 34506.
  23. 23. R Kruijne,D Van Kraalingen,J Te Roller (2007). User manual for the Groundwater Atlas for pesticides version 2022. User manual for the Groundwater Atlas for pesticides version 2022
  24. 24. M Sharifi,A Bazyar (2011). Importance of Intermolecular Interactions in Assessing Hopping Mobilities in Organic Field Effect Transistors: Pentacene versus Dithiophene-tetrathiafulvalene. ACEEE Int. J. on Control System and Instrumentation, 02, 3.
  25. 25. Hyeok Kim,Dong-Seok Song,Jin-Hyuk Kwon,Ji-Hoon Jung,Do-Kyung Kim,Seongmin Kim,In Kang,Jonghoo Park,Heung-Sik Tae,Nicolas Battaglini,Philippe Lang,Gilles Horowitz,Jin-Hyuk Bae (2016). Nonlinear Transport in Organic Thin Film Transistors with Soluble Small Molecule Semiconductor. Journal of Nanoscience and Nanotechnology, 16(3), 2779-2782.
  26. 26. Andreas Petritz,Archim Wolfberger,Alexander Fian,Thomas Griesser,Mihai Irimia‐vladu,Barbara Stadlober (2015). Cellulose‐Derivative‐Based Gate Dielectric for High‐Performance Organic Complementary Inverters. Advanced Materials, 27(46), 7645-7656.
  27. 27. Jiyoul Lee,Jong Chung,Do Kim,Bang-Lin Lee,Jeong-Il Park,Sangyoon Lee,Roger Häusermann,Bertram Batlogg,Sang-Soo Lee,Insil Choi,Il Kim,Moon Kang (2015). Thin Films of Highly Planar Semiconductor Polymers Exhibiting Band-like Transport at Room Temperature. Journal of the American Chemical Society, 137(25), 7990-7993.
  28. 28. Y Hou,I,M Low,T Kwong,D (2004). Metal Gate Work Function Engineering on Gate Leakage of MOSFETs. IEEE Transactions on Electron Devices, 51, 1783.
  29. 29. C Dimitrakopoulos,S Purushothaman,J Kymissis,A Callegari,J Shaw (1999). Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators. Science, 283(5403), 822-824.
  30. 30. K Müller,A Goryachko,Y Burkov,C Schwiertz,M Ratzke,J Köble,J Reif,D Schmeißer (2004). Scanning Kelvin probe and photoemission electron microscopy of organic source-drain structures. Synthetic Metals, 146(3), 377-382.
  31. 31. T Li,P Ruden,I Campbell,D Smith (2003). Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling. J. Appl.Phys, 93, 4017.
  32. 32. Kanan Puntambekar,Paul Pesavento,C Frisbie (2003). Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy. Applied Physics Letters, 83(26), 5539-5541.
  33. 33. L Bürgi,H Sirringhaus,R Friend (2002). Noncontact potentiometry of polymer field-effect transistors. Applied Physics Letters, 80(16), 2913-2915.

Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

W. Wondmagegn. 2017. "Simulation based Characterization of the Transport Channel Parameters of Pentacene Thin Film Transistor: Effect of Gate Insulator Thickness and Gate Electrode Work Functio". Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 16 (GJRE Volume 16 Issue F8).

More Citation Formats

Download Citation

Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Keywords
Classification
GJRE-F Classification FOR Code: 091599
090699
Version of record

v1.2

Issue date
February 5, 2017

Language
English
Order Article Reprint
Experience in AR

Explore published articles in an immersive Augmented Reality environment. Our platform converts research papers into interactive 3D books, allowing readers to view and interact with content using AR and VR compatible devices.

Read in 3D

Your published article is automatically converted into a realistic 3D book. Flip through pages and read research papers in a more engaging and interactive format.

Article Matrices
Total Views: 1.9K
Total Downloads: 111
All Trends

Request Access

Please fill out the form below to request access to this research paper. Your request will be reviewed by the editorial or author team.
X

This is the heading

Lorem ipsum dolor sit amet, consectetur adipiscing elit. Ut elit tellus, luctus nec ullamcorper mattis, pulvinar dapibus leo.

High-quality academic research articles on global topics and journals.

Simulation based Characterization of the Transport Channel Parameters of Pentacene Thin Film Transistor: Effect of Gate Insulator Thickness and Gate Electrode Work Functio

W. Wondmagegn
W. Wondmagegn Frostburg State University