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Static Characterization of InAs/AlGaAs Broadband Self-Assembled Quantum Dot Lasers

§ Islamic Azad University, Mashhad, Iran
‡ Khayyam University

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Static Characterization of InAs/AlGaAs Broadband Self-Assembled Quantum Dot Lasers

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Abstract

In this paper we have studied the static-characteristics of InAs/AlGaAs broadband self- assembled quantum-dot laser diodes (SAQD-LDs) solving the rate equations numerically using fourth-order Runge-Kutta method. Energy level, size, and composition distributions of the InAs/AlGaAs broadband quantum-dots (QDs) are considered and their effects on Staticcharacteristics are investigated. Simulated results of static-characteristics show that nonlinearity appears in light-current characteristics whereas homogeneous broadening (HB) becomes equal to inhomogeneous broadening (IHB). Slope-efficiency increases as the HB heightens up to the IHB. Exceeding the HB from IHB results in degradation of light-current characteristics. In fact, InAs/AlGaAs broadband SAQD-LD has the best performance when HB is equal to IHB. Lightcurrent characteristics degrade and threshold current increases as the IHB enhances. We also investigate the effects of QD coverage on the laser performance and show that there is an optimum QD coverage in which the SAQD-LD operates with lowest possible threshold current and maximum output power as whatever the QD coverage enhances from that optimum amount, the threshold current increases and slope efficiency decreases.

References

1 Cites in Article
  1. 1. Djie H S,Ooi B,Fang,Fastenau Wu X Y,X And Liu,Hopkinson M (2007). ROOM-TEMPERATURE BROADBAND EMISSION OF AN INGAAS/GAAS QUANTUM DOTS LASER. OPT. LETT, 32, 44-46.

Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

H. Arabshahi. 1969. "Static Characterization of InAs/AlGaAs Broadband Self-Assembled Quantum Dot Lasers". Global Journal of Science Frontier Research - A: Physics & Space Science GJSFR-A Volume 12 (GJSFR Volume 12 Issue A1).

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Journal Specifications

Crossref Journal DOI 10.17406/GJSFR

Print ISSN 0975-5896

e-ISSN 2249-4626

Keywords
Classification
GJSFR-A Classification FOR Code: 020603
Version of record
v1.2

Language
English
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Static Characterization of InAs/AlGaAs Broadband Self-Assembled Quantum Dot Lasers

H. Arabshahi
H. Arabshahi Islamic Azad University, Mashhad, Iran
H. Arabshahi
H. Arabshahi <p>Khayyam University</p>