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ReserarchID
OHIBF
Crossref Journal DOI 10.17406/GJSFR
Print ISSN 0975-5896
e-ISSN 2249-4626
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The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depended on the oxidation condition: temperature, cooling rate, oxide thickness. In the Si-SiO 2 -Si 3 N 4 system the stresses relaxation by the strain occur due to the opposite sign of the thermal expansion coefficient of Si-SiO 2 and Si 3 N 4 on Si. Laser irradiation allows to modify the system stresses.
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