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The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depended on the oxidation condition: temperature, cooling rate, oxide thickness. In the Si-SiO 2 -Si 3 N 4 system the stresses relaxation by the strain occur due to the opposite sign of the thermal expansion coefficient of Si-SiO 2 and Si 3 N 4 on Si. Laser irradiation allows to modify the system stresses.
Daniel Kropman, Viktor Seeman, Artur Medvids. 2017. "Stresses Relaxation Mechanism in the Si-SiO2 System and its Influence on the Interface Properties". Global Journal of Science Frontier Research, Global Journal of Science Frontier Research - B: Chemistry GJSFR-B Volume 17 (GJSFR Volume 17 Issue B1).
Crossref Journal DOI 10.17406/GJSFR
Print ISSN 0975-5896
e-ISSN 2249-4626
v1.2
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Total Score: 148
Country: Estonia
Subject: Global Journal of Science Frontier Research
Authors: Daniel Kropman, TAnu Laas, Viktor Seeman, Artur Medvids (PhD/Dr. count: 0)
View Count (all-time): 361
Total Views (Real + Logic): 1496
Total Downloads (simulated): 87
Publish Date: 2017 03, Fri
Monthly Totals (Real + Logic):
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