Structural, Optical and Raman Characterization of Nano-Crystalline Cu Doped ZnO Thin Films Deposited by Pulse Laser Deposition Technique

Article ID

SFRRESC0

Structural, Optical and Raman Characterization of Nano-Crystalline Cu Doped ZnO Thin Films Deposited by Pulse Laser Deposition Technique

Pawan Kumar
Pawan Kumar Jain University
Aravind Kumar
Aravind Kumar
Alvaro Instan
Alvaro Instan
Ram S. Katiyar
Ram S. Katiyar
DOI

Abstract

In the present work, Cu doped ZnO thin films were deposited on Indium Tin Oxide (ITO) substrates using Pulse Laser Deposition(PLD) at different substrate temperatures. The effect of substrate temperature on the structure of thin films, surface morphology, optical, and electrical properties of the deposited thin films was investigated. The structure of Cu doped ZnO confirmed by using a X-ray diffraction pattern. X-ray diffraction patterns show that all thin films have a wurtzite structure with (002) orientation. Atomic force microscopy are used for surface analyses. The transmittance of the thin films was measured in the wavelength range of 300 nm – 800 nm. The band gap of the thin films was estimated (3.14 eV to 3.28 eV) using the UV-Visible absorption spectra. Raman spectroscopy was used to find the atomic bond behavior at room temperature and lower than room temperature. These films have a possible application in thin films based on solar cells and sensors.

Structural, Optical and Raman Characterization of Nano-Crystalline Cu Doped ZnO Thin Films Deposited by Pulse Laser Deposition Technique

In the present work, Cu doped ZnO thin films were deposited on Indium Tin Oxide (ITO) substrates using Pulse Laser Deposition(PLD) at different substrate temperatures. The effect of substrate temperature on the structure of thin films, surface morphology, optical, and electrical properties of the deposited thin films was investigated. The structure of Cu doped ZnO confirmed by using a X-ray diffraction pattern. X-ray diffraction patterns show that all thin films have a wurtzite structure with (002) orientation. Atomic force microscopy are used for surface analyses. The transmittance of the thin films was measured in the wavelength range of 300 nm – 800 nm. The band gap of the thin films was estimated (3.14 eV to 3.28 eV) using the UV-Visible absorption spectra. Raman spectroscopy was used to find the atomic bond behavior at room temperature and lower than room temperature. These films have a possible application in thin films based on solar cells and sensors.

Pawan Kumar
Pawan Kumar Jain University
Aravind Kumar
Aravind Kumar
Alvaro Instan
Alvaro Instan
Ram S. Katiyar
Ram S. Katiyar

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Pawan Kumar. 2019. “. Global Journal of Science Frontier Research – A: Physics & Space Science GJSFR-A Volume 19 (GJSFR Volume 19 Issue A9): .

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Journal Specifications

Crossref Journal DOI 10.17406/GJSFR

Print ISSN 0975-5896

e-ISSN 2249-4626

Issue Cover
GJSFR Volume 19 Issue A9
Pg. 43- 49
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GJSFR-A Classification: FOR Code: 020599
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Structural, Optical and Raman Characterization of Nano-Crystalline Cu Doped ZnO Thin Films Deposited by Pulse Laser Deposition Technique

Pawan Kumar
Pawan Kumar Jain University
Aravind Kumar
Aravind Kumar
Alvaro Instan
Alvaro Instan
Ram S. Katiyar
Ram S. Katiyar

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