Structural, Optical and Raman Characterization of Nano-Crystalline Cu Doped ZnO Thin Films Deposited by Pulse Laser Deposition Technique

1
Pawan Kumar
Pawan Kumar
2
Aravind Kumar
Aravind Kumar
3
Alvaro Instan
Alvaro Instan
4
Ram S. Katiyar
Ram S. Katiyar
1 Gurukul Kangri Vishwavidyalaya Haridwar

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In the present work, Cu doped ZnO thin films were deposited on Indium Tin Oxide (ITO) substrates using Pulse Laser Deposition(PLD) at different substrate temperatures. The effect of substrate temperature on the structure of thin films, surface morphology, optical, and electrical properties of the deposited thin films was investigated. The structure of Cu doped ZnO confirmed by using a X-ray diffraction pattern. X-ray diffraction patterns show that all thin films have a wurtzite structure with (002) orientation. Atomic force microscopy are used for surface analyses. The transmittance of the thin films was measured in the wavelength range of 300 nm -800 nm. The band gap of the thin films was estimated (3.14 eV to 3.28 eV) using the UV-Visible absorption spectra. Raman spectroscopy was used to find the atomic bond behavior at room temperature and lower than room temperature. These films have a possible application in thin films based on solar cells and sensors.

22 Cites in Articles

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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

Pawan Kumar. 2019. \u201cStructural, Optical and Raman Characterization of Nano-Crystalline Cu Doped ZnO Thin Films Deposited by Pulse Laser Deposition Technique\u201d. Global Journal of Science Frontier Research - A: Physics & Space Science GJSFR-A Volume 19 (GJSFR Volume 19 Issue A9): .

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GJSFR Volume 19 Issue A9
Pg. 43- 49
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Crossref Journal DOI 10.17406/GJSFR

Print ISSN 0975-5896

e-ISSN 2249-4626

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GJSFR-A Classification: FOR Code: 020599
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v1.2

Issue date

October 30, 2019

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English

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In the present work, Cu doped ZnO thin films were deposited on Indium Tin Oxide (ITO) substrates using Pulse Laser Deposition(PLD) at different substrate temperatures. The effect of substrate temperature on the structure of thin films, surface morphology, optical, and electrical properties of the deposited thin films was investigated. The structure of Cu doped ZnO confirmed by using a X-ray diffraction pattern. X-ray diffraction patterns show that all thin films have a wurtzite structure with (002) orientation. Atomic force microscopy are used for surface analyses. The transmittance of the thin films was measured in the wavelength range of 300 nm -800 nm. The band gap of the thin films was estimated (3.14 eV to 3.28 eV) using the UV-Visible absorption spectra. Raman spectroscopy was used to find the atomic bond behavior at room temperature and lower than room temperature. These films have a possible application in thin films based on solar cells and sensors.

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Structural, Optical and Raman Characterization of Nano-Crystalline Cu Doped ZnO Thin Films Deposited by Pulse Laser Deposition Technique

Pawan Kumar
Pawan Kumar Jain University
Aravind Kumar
Aravind Kumar
Alvaro Instan
Alvaro Instan
Ram S. Katiyar
Ram S. Katiyar

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