Structural, Raman and Electrical Characterization of Nanocrystalline CdSe thin Films Deposited by Pulse Laser Deposition Technique

1
Pawan Kumar
Pawan Kumar
2
Aravind Kumar
Aravind Kumar
3
Rajesh K. Katiyar
Rajesh K. Katiyar
4
Alvaro Instan
Alvaro Instan
5
Ram S. Katiyar
Ram S. Katiyar
6
Trilok Pathak
Trilok Pathak
1 Gurukul Kangri Vishwavidyalaya Haridwar

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Cadmium Selenide (CdSe) thin films were deposited by Pulse Laser Deposition(PLD) technique onto Indium Tin Oxide (ITO) coated glass substrates at different substrate temperatures. The structure of CdSe confirmed by using the X-ray diffraction pattern. The surface element analysis and morphology of thin films were done by X-ray photoelectron spectroscopy and Atomic force microscopy, respectively. Raman spectroscopy is used for atomic bond behavior at room temperature and lower than room temperature. The band gap of the thin films was estimated (1.75 eV to 2.3 eV) using the UV-Visible absorption spectra. Electrical behavior (I-V characteristic) of thin films also studied at different temperatures. These films have possible applications in thin films based on solar cells, and sensors.

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No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

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No ethics committee approval was required for this article type.

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Pawan Kumar. 2020. \u201cStructural, Raman and Electrical Characterization of Nanocrystalline CdSe thin Films Deposited by Pulse Laser Deposition Technique\u201d. Global Journal of Science Frontier Research - B: Chemistry GJSFR-B Volume 19 (GJSFR Volume 19 Issue B3): .

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GJSFR Volume 19 Issue B3
Pg. 25- 33
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Crossref Journal DOI 10.17406/GJSFR

Print ISSN 0975-5896

e-ISSN 2249-4626

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GJSFR-B Classification: FOR Code: 250403
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v1.2

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January 10, 2020

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English

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Cadmium Selenide (CdSe) thin films were deposited by Pulse Laser Deposition(PLD) technique onto Indium Tin Oxide (ITO) coated glass substrates at different substrate temperatures. The structure of CdSe confirmed by using the X-ray diffraction pattern. The surface element analysis and morphology of thin films were done by X-ray photoelectron spectroscopy and Atomic force microscopy, respectively. Raman spectroscopy is used for atomic bond behavior at room temperature and lower than room temperature. The band gap of the thin films was estimated (1.75 eV to 2.3 eV) using the UV-Visible absorption spectra. Electrical behavior (I-V characteristic) of thin films also studied at different temperatures. These films have possible applications in thin films based on solar cells, and sensors.

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Structural, Raman and Electrical Characterization of Nanocrystalline CdSe thin Films Deposited by Pulse Laser Deposition Technique

Pawan Kumar
Pawan Kumar Jain University
Aravind Kumar
Aravind Kumar
Rajesh K. Katiyar
Rajesh K. Katiyar
Alvaro Instan
Alvaro Instan
Ram S. Katiyar
Ram S. Katiyar
Trilok Pathak
Trilok Pathak

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