Neural Networks and Rules-based Systems used to Find Rational and Scientific Correlations between being Here and Now with Afterlife Conditions
Neural Networks and Rules-based Systems used to Find Rational and
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Cadmium Selenide (CdSe) thin films were deposited by Pulse Laser Deposition(PLD) technique onto Indium Tin Oxide (ITO) coated glass substrates at different substrate temperatures. The structure of CdSe confirmed by using the X-ray diffraction pattern. The surface element analysis and morphology of thin films were done by X-ray photoelectron spectroscopy and Atomic force microscopy, respectively. Raman spectroscopy is used for atomic bond behavior at room temperature and lower than room temperature. The band gap of the thin films was estimated (1.75 eV to 2.3 eV) using the UV-Visible absorption spectra. Electrical behavior (I-V characteristic) of thin films also studied at different temperatures. These films have possible applications in thin films based on solar cells, and sensors.
Pawan Kumar. 2020. \u201cStructural, Raman and Electrical Characterization of Nanocrystalline CdSe thin Films Deposited by Pulse Laser Deposition Technique\u201d. Global Journal of Science Frontier Research - B: Chemistry GJSFR-B Volume 19 (GJSFR Volume 19 Issue B3): .
Crossref Journal DOI 10.17406/GJSFR
Print ISSN 0975-5896
e-ISSN 2249-4626
The methods for personal identification and authentication are no exception.
Total Score: 106
Country: India
Subject: Global Journal of Science Frontier Research - B: Chemistry
Authors: Pawan Kumar, Aravind Kumar, Rajesh K. Katiyar, Alvaro Instan, Ram S. Katiyar, Trilok Pathak (PhD/Dr. count: 0)
View Count (all-time): 172
Total Views (Real + Logic): 2601
Total Downloads (simulated): 1266
Publish Date: 2020 01, Fri
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Cadmium Selenide (CdSe) thin films were deposited by Pulse Laser Deposition(PLD) technique onto Indium Tin Oxide (ITO) coated glass substrates at different substrate temperatures. The structure of CdSe confirmed by using the X-ray diffraction pattern. The surface element analysis and morphology of thin films were done by X-ray photoelectron spectroscopy and Atomic force microscopy, respectively. Raman spectroscopy is used for atomic bond behavior at room temperature and lower than room temperature. The band gap of the thin films was estimated (1.75 eV to 2.3 eV) using the UV-Visible absorption spectra. Electrical behavior (I-V characteristic) of thin films also studied at different temperatures. These films have possible applications in thin films based on solar cells, and sensors.
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