Using Gaussas Law in Determinating the Width Emitter Extension Region of the Solar Cell Operating in Open Circuit Condition

α
mbodji senghane
mbodji senghane
σ
Dr. E. Sow
Dr. E. Sow
ρ
Dr Senghane Mbodji
Dr Senghane Mbodji
Ѡ
B. Zouma
B. Zouma
¥
Zoungrana
Zoungrana
§
I. Zerbo
I. Zerbo
χ
A. Sere
A. Sere
ν
G. Sissoko
G. Sissoko
α Cheikh Anta Diop University Cheikh Anta Diop University

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Using Gaussas Law in Determinating the Width Emitter Extension Region of the Solar Cell Operating in Open Circuit Condition

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Abstract

In this article, we are discussing the Gauss’s law used to determine the width emitter extension region of the solar cell operating in open circuit condition. Taking into account the grain size (g), the grain boundary recombination velocity (Sgb) and the emitter doping density (Nemitter), the Gaussian Law helped us to calculate the width emitter extension region of the solar cell operating in open circuit condition. To determine the width emitter extension region, we first showed that grain size (g), grain boundary recombination velociy (Sgb) are oppesite effects and concluded that best solar cells are characterized by low junction extension region width observed only with high grain size (g) and low grain boundary recombination velocity (Sgb).

References

10 Cites in Article
  1. H Chen,C Lee,C Chang,J Tsang,K Tsai,L (2009). The study of emitter thickness effect on the heterostructure emitter bipolar transistors.
  2. S Tadayon,B Tadayon,P Tasker,W Schaff,L Eastman (2002). Reduction of emitter thickness in AlGaAs/GasAs heterojunction bipolar transistor.
  3. Kalyan Rapolu,Pritpal Singh,Stephen Shea (2010). Two dimensional numerical modeling of a silicon solar cell with selective emitter configuration.
  4. S Mbodji,B Mbow,F Barro,G Sissoko (2011). A 3D model for thickness and diffusion capacitance of emitter-base junction determination in a bifacial polycrystalline solar cell under real operating condition.
  5. M Deme,S Mbodji,S Ndoye,A Thiam,A Dieng,G Sissoko (2010). Influence of illumination incidence angle, grain size and grain boundary recombination velocity on the bifacial solar cell diffusion capacitance.
  6. H Diallo,A Maiga,Wereme,G Sissoko (2008). New approach of both junction and back surface recombination velocities in a 3D modelling study of a polycrystalline silicon solar cell.
  7. S Mbodji,M Dieng,B Mbow,F Barro,G Sissoko (2012). Three dimensional simulated modelling of diffusion capacitance of polycrystalline bifacial silicon solar cell.
  8. S Mbodji,I Ly,H Diallo,M Dione,O Diasse,G Sissoko (2012). Modeling study of n+/p solar cell resistances from single I-V characteristic curve considering the junction Rrecombination velocity (Sf).
  9. J Queyrel (1991). Precis de Physique -Electricité 1, Cours et Exercices Résolus Bréal.
  10. S Madougou,Kaka,G Sissoko (2010). Silicon Solar Cells: Recombination and Electrical Parameters.

Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

mbodji senghane. 2012. \u201cUsing Gaussas Law in Determinating the Width Emitter Extension Region of the Solar Cell Operating in Open Circuit Condition\u201d. Global Journal of Science Frontier Research - A: Physics & Space Science GJSFR-A Volume 12 (GJSFR Volume 12 Issue A6): .

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GJSFR Volume 12 Issue A6
Pg. 67- 72
Journal Specifications

Crossref Journal DOI 10.17406/GJSFR

Print ISSN 0975-5896

e-ISSN 2249-4626

Version of record

v1.2

Issue date

September 22, 2012

Language
en
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Published Article

In this article, we are discussing the Gauss’s law used to determine the width emitter extension region of the solar cell operating in open circuit condition. Taking into account the grain size (g), the grain boundary recombination velocity (Sgb) and the emitter doping density (Nemitter), the Gaussian Law helped us to calculate the width emitter extension region of the solar cell operating in open circuit condition. To determine the width emitter extension region, we first showed that grain size (g), grain boundary recombination velociy (Sgb) are oppesite effects and concluded that best solar cells are characterized by low junction extension region width observed only with high grain size (g) and low grain boundary recombination velocity (Sgb).

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Using Gaussas Law in Determinating the Width Emitter Extension Region of the Solar Cell Operating in Open Circuit Condition

Dr. E. Sow
Dr. E. Sow
Dr Senghane Mbodji
Dr Senghane Mbodji
B. Zouma
B. Zouma
Zoungrana
Zoungrana
I. Zerbo
I. Zerbo
A. Sere
A. Sere
G. Sissoko
G. Sissoko

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