Photosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact

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E.A. Kerimov
E.A. Kerimov
1 Azerbaijan Technical University

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Measured resistivities of produced silicide showed their good conductive properties. The calculation of technological route for obtaining thin silicide contacts (

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No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

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No ethics committee approval was required for this article type.

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Not applicable for this article.

E.A. Kerimov. 2026. \u201cPhotosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact\u201d. Global Journal of Research in Engineering - G: Industrial Engineering GJRE-G Volume 23 (GJRE Volume 23 Issue G2): .

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Enhanced photoelectric shield with nickel-silicon contact.
Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

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GJRE-G Classification: LCC: TK7874
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v1.2

Issue date

November 29, 2023

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English

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Measured resistivities of produced silicide showed their good conductive properties. The calculation of technological route for obtaining thin silicide contacts (

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Photosensitive Structure with Schottky Barrier Based on Nickel-Silicon Silicon Contact

E.A. Kerimov
E.A. Kerimov Azerbaijan Technical University

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