A First Principleas Approach to Study of the Silicon Drift Detector with Embedded JFET: Noise Analysis, Simulations & Analytical Modeling

A First Principleas Approach to Study of the Silicon Drift Detector with Embedded JFET: Noise Analysis, Simulations & Analytical Modeling

Article ID

4QDZT

A First Principleas Approach to Study of the Silicon Drift Detector with Embedded JFET: Noise Analysis, Simulations & Analytical Modeling

Dr. Pourus Mehta

DOI

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Abstract

Proto-type commercial grade Silicon Drift Detectors (SDDs) with on-chip low noise JFETs have been realized using silicon bipolar technology at Bharat Electronics Ltd (BEL), Bangalore. Noise analysis articulating the relationships of various noise sources on the electrical parameters of the fabricated SDD and JFET have been discussed. TCAD device simulations have been performed for the SDD and on-chip JFET for static (dc) and dynamic cases. The static case simulations revealed values of critical dc performance parameters like leakage current, anode capacitance etc. Dynamic simulations meant to study the effect of radiation, revealed the relationship between drift time & drift distance within the detector. Analytical modeling of the I-V characteristics of the SDD has also been performed to predict the leakage current behavior for various other designs fabricated at BEL.

A First Principleas Approach to Study of the Silicon Drift Detector with Embedded JFET: Noise Analysis, Simulations & Analytical Modeling

Authors

Dr. Pourus Mehta

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How to Cite

Dr. Pourus Mehta. 2012. “. Global Journal of Research in Engineering – F: Electrical & Electronic GJRE-F Volume 12 (GJRE Volume 12 Issue F11): .

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

GJRE Volume 12 Issue F11
Pg. 1- 10

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Submission Received February 10, 2012
Accepted March 2, 2012
Published March 15, 2012

Keywords

Junction Field Effect Transistors Silicon Drift Detectors Technology Computer aided Design & Equivalent Noise Charge

Article Matrices

Total Score: 106

Country: Unknown

Subject: Global Journal of Research in Engineering - F: Electrical & Electronic

Authors: Dr. Pourus Mehta (PhD/Dr. count: 1)

View Count (all-time): 158

Total Views (Real + Logic): 5320

Total Downloads (simulated): 2760

Publish Date: 2012 10, Thu

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Total Views: 5320

Total Downloads: 2760

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