A First Principleas Approach to Study of the Silicon Drift Detector with Embedded JFET: Noise Analysis, Simulations & Analytical Modeling

Dr. Pourus Mehta

A First Principleas Approach to Study of the Silicon Drift Detector with Embedded JFET: Noise Analysis, Simulations & Analytical Modeling

Dr. Pourus Mehta * § Ph.D. (Physics)

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Bhabha Atomic Research Centre, Trombay, Mumbai, India.

A First Principleas Approach to Study of the Silicon Drift Detector with Embedded JFET: Noise Analysis, Simulations & Analytical Modeling

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Abstract

Proto-type commercial grade Silicon Drift Detectors (SDDs) with on-chip low noise JFETs have been realized using silicon bipolar technology at Bharat Electronics Ltd (BEL), Bangalore. Noise analysis articulating the relationships of various noise sources on the electrical parameters of the fabricated SDD and JFET have been discussed. TCAD device simulations have been performed for the SDD and on-chip JFET for static (dc) and dynamic cases. The static case simulations revealed values of critical dc performance parameters like leakage current, anode capacitance etc. Dynamic simulations meant to study the effect of radiation, revealed the relationship between drift time & drift distance within the detector. Analytical modeling of the I-V characteristics of the SDD has also been performed to predict the leakage current behavior for various other designs fabricated at BEL.

References

3 Cites in Article

Reference Format

1. Emilio Gatti,Pavel Rehak (1984). Semiconductor drift chamber — An application of a novel charge transport scheme. Nuclear Instruments and Methods in Physics Research, 225(3), 608-614.
2. P Lechner,C Fiorini,R Hartmann,J Kemmer,N Krause,P Leutenegger,A Longoni,H Soltau,D Stötter,R Stötter,L Strüder,U Weber (2001). Silicon drift detectors for high count rate X-ray spectroscopy at room temperature. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 458(1-2), 281-287.
3. A Rashevsky,V Bonvicini,P Burger,S Piano,C Piemonte,A Vacchi (2002). Large area silicon drift detector for the ALICE experiment. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 485(1-2), 54-60.

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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Dr. Pourus Mehta. 2012. "A First Principleas Approach to Study of the Silicon Drift Detector with Embedded JFET: Noise Analysis, Simulations & Analytical Modeling". Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 12 (GJRE Volume 12 Issue F11).

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GJRE Volume 12 Issue F11

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Keywords

Junction Field Effect Transistors Silicon Drift Detectors Technology Computer aided Design & Equivalent Noise Charge

Classification

PACS 85.30.-z

85.30.De & 85.30.Tv

Submission ReceivedFebruary 10, 2012
Peer Review Double Blind
Handling Editor
Accepted March 2, 2012
Published March 15, 2012

Version of record

v1.2

Issue date

October 25, 2012

Language

English

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Total Score: 106

Country: Unknown

Subject: Global Journal of Research in Engineering

Authors: Dr. Pourus Mehta (PhD/Dr. count: 1)

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Publish Date: 2012 03, Thu

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