AC Characteristics of a Dual Gate Large Area Graphene MOSFET

AC Characteristics of a Dual Gate Large Area Graphene MOSFET

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Md. Tawabur Rahman

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Ashish Kumar Roy

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Md. Shamim Sarker

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Md. Tajul Islam

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α Khulna University of Engineering and Technology

AC Characteristics of a Dual Gate Large Area Graphene MOSFET

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Abstract

This paper presents a detailed study of RF characteristics together with the high frequency performance of dual gate large area graphene MOSFET. A quasi analytical modeling approach is presented here. To know the RF characteristics of a graphene MOSFET, the transconductance is simulated using small signal equivalent model. Finally the intrinsic top and back gate gain of graphene MOSFET are also shown which are very important figure of merit for RF applications.

References

10 Cites in Article

Reference Format

A Geim,K Novoselov (2007). The rise of graphene.
F Schwierz (2010). Graphene transistors.
K Novoselov,A Geim,S Morozov,D Jiang,M Katsnelson,I Grigorieva,S Dubonos,A Firsov (2005). Two-dimensional gas of massless Dirac fermions in graphene.
F Schedin,A Geim (2007). Detection of individual gas molecules adsorbed on graphene.
Inanc Meric,Melinda Han,Andrea Young,Barbaros Ozyilmaz,Philip Kim,Kenneth Shepard (2008). Current saturation in zero-bandgap, top-gated graphene field-effect transistors.
K Bolotina,K Sikesb,Z Jianga,M Klimac,G Fudenberga,J Honec,P Kima,H Stormer (2008). Ultrahigh electron mobility in suspended graphene.
A Geim (2009). Graphene: Status and Prospects.
Md,* Tawabur Rahman,Ashish Roy,Hossain Md,Md Abu Reza Bhuiyan,Ashraful Islam,Bhuiyan DC Characteristics of Dual Gated Large Area Graphene MOSFET.
S Thiele,J Schaefer,F Schwierz (2010). Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels.
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Funding

No external funding was declared for this work.

Conflict of Interest

The authors declare no conflict of interest.

Ethical Approval

No ethics committee approval was required for this article type.

Data Availability

Not applicable for this article.

How to Cite This Article

Md. Tawabur Rahman. 2014. \u201cAC Characteristics of a Dual Gate Large Area Graphene MOSFET\u201d. Global Journal of Research in Engineering - F: Electrical & Electronic GJRE-F Volume 14 (GJRE Volume 14 Issue F4): .

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GJRE Volume 14 Issue F4
Pg. 21- 26

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Journal Specifications

Crossref Journal DOI 10.17406/gjre

Print ISSN 0975-5861

e-ISSN 2249-4596

Keywords

GFET graphene MOSFET large area graphene top and back gate gain transconductance

Submission ReceivedDecember 8, 2013
Peer Review Double Blind
Handling Editor
Accepted January 4, 2014
Published January 15, 2014

Version of record

v1.2

Issue date

June 29, 2014

Language

en

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Article Matrices

Total Score: 104

Country: Bangladesh

Subject: Global Journal of Research in Engineering - F: Electrical & Electronic

Authors: Md. Tawabur Rahman, Ashish Kumar Roy, Md. Shamim Sarker, Md. Tajul Islam (PhD/Dr. count: 0)

View Count (all-time): 189

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Publish Date: 2014 06, Sun

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Total Views: 4519

Total Downloads: 2246

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Published Article

This paper presents a detailed study of RF characteristics together with the high frequency performance of dual gate large area graphene MOSFET. A quasi analytical modeling approach is presented here. To know the RF characteristics of a graphene MOSFET, the transconductance is simulated using small signal equivalent model. Finally the intrinsic top and back gate gain of graphene MOSFET are also shown which are very important figure of merit for RF applications.

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